High responsivity ultraviolet photodetector based on p-GaN/i-ZnO nanorod/n-ZnO:In nanorod

Chia Hsun Chen, Jheng Tai Yan, Ching Ting Lee

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The p-i-n (p-GaN/i-ZnO nanorod/n-ZnO:In nanorod)-heterostructured nanorod photodetectors were fabricated using vapor cooling condensation method through anodic alumina membrane (AAM) plate. A conductive atomic force microscope system was employed to investigate the electrical properties of the single ZnO nanorod photodetector. The leakage current of the single p-i-n-heterostructured nanorod photodetector was lower than 5 pA for bias voltage up to 5V. The ultraviolet (360 nm)-visible (400 nm) rejection ratio was 66 and the photoresponsivity peaked at 360 nm was about 1461 A/W under reverse bias of -5V.

原文English
主出版物標題Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
頁面27-32
頁數6
版本4
DOIs
出版狀態Published - 2010 十二月 29
事件Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada
持續時間: 2010 四月 252010 四月 30

出版系列

名字ECS Transactions
號碼4
28
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

OtherWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
國家/地區Canada
城市Vancouver, BC
期間10-04-2510-04-30

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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