High-selectivity damascene chemical mechanical polishing

Shao Yu Chiu, Ying Lang Wang, Chuan Pu Liu, Shih Chieh Chang, Gwo Jen Hwang, Ming Shiann Feng, Chia Fu Chen

研究成果: Conference article同行評審

32 引文 斯高帕斯(Scopus)


In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing.

頁(從 - 到)60-63
期刊Thin Solid Films
出版狀態Published - 2006 3月 1
事件Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
持續時間: 2004 11月 122004 11月 14

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學


深入研究「High-selectivity damascene chemical mechanical polishing」主題。共同形成了獨特的指紋。