TY - JOUR
T1 - High-selectivity damascene chemical mechanical polishing
AU - Chiu, Shao Yu
AU - Wang, Ying Lang
AU - Liu, Chuan Pu
AU - Chang, Shih Chieh
AU - Hwang, Gwo Jen
AU - Feng, Ming Shiann
AU - Chen, Chia Fu
N1 - Funding Information:
The authors would like to thank the National Science Council of the Republic of China, Taiwan, for partially supporting this research under Contract no. NSC92-2216-E006-046. Technical assistance from the National Nano Device Laboratories of NSC is also appreciated.
PY - 2006/3/1
Y1 - 2006/3/1
N2 - In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing.
AB - In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing.
UR - http://www.scopus.com/inward/record.url?scp=30944445998&partnerID=8YFLogxK
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U2 - 10.1016/j.tsf.2005.07.063
DO - 10.1016/j.tsf.2005.07.063
M3 - Conference article
AN - SCOPUS:30944445998
SN - 0040-6090
VL - 498
SP - 60
EP - 63
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD
Y2 - 12 November 2004 through 14 November 2004
ER -