High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer

K. H. Lee, P. C. Chang, Shoou-Jinn Chang, Y. K. Su, Y. C. Wang, C. H. Liu

研究成果: Article

1 引文 (Scopus)

摘要

Nitride-based ultraviolet (UV) photosensors with a low-temperature (LT) AlGaN interlayer were fabricated and characterized. Material analysis results showed that dark pits corresponding to threading dislocation (TD) terminations were almost invisible after inserting the LT AlGaN interlayer. It was also found that we could significantly suppress the dark leakage current by using the LT AlGaN interlayer owing to TD annihilation and demultiplication processes. For photosensors with the LT AlGaN interlayer, the responsivity at 360 nm and UV-to-visible rejection ratio were found to be 0.12 A/W and 2.45 × 10 3, respectively, under 5 V applied bias.

原文English
頁(從 - 到)29-33
頁數5
期刊Journal of Electronic Materials
39
發行號1
DOIs
出版狀態Published - 2010 一月 1

指紋

photosensors
Nitrides
nitrides
interlayers
sensitivity
Temperature
Leakage currents
rejection
leakage
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

Lee, K. H. ; Chang, P. C. ; Chang, Shoou-Jinn ; Su, Y. K. ; Wang, Y. C. ; Liu, C. H. / High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer. 於: Journal of Electronic Materials. 2010 ; 卷 39, 編號 1. 頁 29-33.
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High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer. / Lee, K. H.; Chang, P. C.; Chang, Shoou-Jinn; Su, Y. K.; Wang, Y. C.; Liu, C. H.

於: Journal of Electronic Materials, 卷 39, 編號 1, 01.01.2010, p. 29-33.

研究成果: Article

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T1 - High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer

AU - Lee, K. H.

AU - Chang, P. C.

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Wang, Y. C.

AU - Liu, C. H.

PY - 2010/1/1

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AB - Nitride-based ultraviolet (UV) photosensors with a low-temperature (LT) AlGaN interlayer were fabricated and characterized. Material analysis results showed that dark pits corresponding to threading dislocation (TD) terminations were almost invisible after inserting the LT AlGaN interlayer. It was also found that we could significantly suppress the dark leakage current by using the LT AlGaN interlayer owing to TD annihilation and demultiplication processes. For photosensors with the LT AlGaN interlayer, the responsivity at 360 nm and UV-to-visible rejection ratio were found to be 0.12 A/W and 2.45 × 10 3, respectively, under 5 V applied bias.

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