High-sensitivity nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer

K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. H. Liu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Nitride-based ultraviolet (UV) photosensors with a low-temperature (LT) AlGaN interlayer were fabricated and characterized. Material analysis results showed that dark pits corresponding to threading dislocation (TD) terminations were almost invisible after inserting the LT AlGaN interlayer. It was also found that we could significantly suppress the dark leakage current by using the LT AlGaN interlayer owing to TD annihilation and demultiplication processes. For photosensors with the LT AlGaN interlayer, the responsivity at 360 nm and UV-to-visible rejection ratio were found to be 0.12 A/W and 2.45 × 10 3, respectively, under 5 V applied bias.

原文English
頁(從 - 到)29-33
頁數5
期刊Journal of Electronic Materials
39
發行號1
DOIs
出版狀態Published - 2010 一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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