High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates

Jyh Jier Ho, Y. K. Fang, Kun Hsien Wu, W. T. Hsieh, S. C. Huang, G. S. Chen, M. S. Ju, Jing Jenn Lin

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Different structures of high-speed infrared sensors based on amorphous silicon germanium and amorphous silicon heterostructures have been successfully developed on crystalline silicon substrates. Experimental results of these developed structures exhibit a superior device performance to that of a traditional p-i-n amorphous photosensor prepared on a glass substrate, especially significant improvements in the rise-time from 465 to 195 //s, and the dark-current from 50 to 3.3 //A for 5 V reverse-bias. Index Terms-Amorphous Si/Ge alloy, crystalline Si, infrared sensor, photoresponse.

原文English
頁(從 - 到)2085-2088
頁數4
期刊IEEE Transactions on Electron Devices
45
發行號9
DOIs
出版狀態Published - 1998 十二月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates」主題。共同形成了獨特的指紋。

引用此