High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

J. W. Shi; J. K. Sheu; C. H. Chen; G. R. Lin; W. C. Lai

doi:10.1109/LED.2007.914070

High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, W. C. Lai

光電科學與工程學系

研究成果: Article › 同行評審

73 引文斯高帕斯（Scopus）

摘要

We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped In_x Ga_1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

原文	English
頁（從 - 到）	158-160
頁數	3
期刊	IEEE Electron Device Letters
卷	29
發行號	2
DOIs	https://doi.org/10.1109/LED.2007.914070
出版狀態	Published - 2008 2月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

存取文件

10.1109/LED.2007.914070

其它文件與鏈接

引用此

@article{2cb5d00dc00b4352bfd2faf02ba87113,

title = "High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures",

abstract = "We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).",

author = "Shi, {J. W.} and Sheu, {J. K.} and Chen, {C. H.} and Lin, {G. R.} and Lai, {W. C.}",

year = "2008",

month = feb,

doi = "10.1109/LED.2007.914070",

language = "English",

volume = "29",

pages = "158--160",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

AU - Shi, J. W.

AU - Sheu, J. K.

AU - Chen, C. H.

AU - Lin, G. R.

AU - Lai, W. C.

PY - 2008/2

Y1 - 2008/2

N2 - We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

AB - We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

UR - http://www.scopus.com/inward/record.url?scp=39549121046&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39549121046&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.914070

DO - 10.1109/LED.2007.914070

M3 - Article

AN - SCOPUS:39549121046

SN - 0741-3106

VL - 29

SP - 158

EP - 160

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此