High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, W. C. Lai

研究成果: Article同行評審

57 引文 斯高帕斯(Scopus)

摘要

We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

原文English
頁(從 - 到)158-160
頁數3
期刊IEEE Electron Device Letters
29
發行號2
DOIs
出版狀態Published - 2008 二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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