This paper presents a high-speed low-voltage built-in current sensor. It mainly utilizes a bulk-driven current mirror as a current sensor to reduce the power supply voltage drop. Based on this technique, we develop an analytic and empirical model to design the built-in current sensor. Experimental results show that the bulk-driven built-in current sensor can have high speed and low area overhead under a low power supply voltage.
|出版狀態||Published - 1997 十二月 1|
|事件||Proceedings of the 1997 3rd IEEE International Workshop on IDDQ Testing - Washington, DC, USA|
持續時間: 1997 十一月 5 → 1997 十一月 6
|Other||Proceedings of the 1997 3rd IEEE International Workshop on IDDQ Testing|
|城市||Washington, DC, USA|
|期間||97-11-05 → 97-11-06|
All Science Journal Classification (ASJC) codes