摘要
This paper presents a high-speed low-voltage built-in current sensor. It mainly utilizes a bulk-driven current mirror as a current sensor to reduce the power supply voltage drop. Based on this technique, we develop an analytic and empirical model to design the built-in current sensor. Experimental results show that the bulk-driven built-in current sensor can have high speed and low area overhead under a low power supply voltage.
原文 | English |
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頁面 | 90-94 |
頁數 | 5 |
出版狀態 | Published - 1997 |
事件 | Proceedings of the 1997 3rd IEEE International Workshop on IDDQ Testing - Washington, DC, USA 持續時間: 1997 11月 5 → 1997 11月 6 |
Other
Other | Proceedings of the 1997 3rd IEEE International Workshop on IDDQ Testing |
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城市 | Washington, DC, USA |
期間 | 97-11-05 → 97-11-06 |
All Science Journal Classification (ASJC) codes
- 一般工程