High-temperature characteristics of a symmetrically-graded InAlAs/In xGa1-xAs/GaAs MHEMT

Ching Sung Lee, Wei Chou Hsu, Ker Hua Su, Jun Chin Huang, Chen Hsian Liao

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

High-temperature characteristics of a symmetrically-graded δ-doped InAlAs/InxGa1-xAs/GaAs (x=0.5→0.65 →0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as ∂Vth/∂T, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized thermal threshold variations and superior high-temperature linearity characteristics, is promising for high-temperature integrated circuit (IC) applications.

原文English
主出版物標題ICSICT-2006
主出版物子標題2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
發行者IEEE Computer Society
頁面878-880
頁數3
ISBN(列印)1424401615, 9781424401611
DOIs
出版狀態Published - 2006 1月 1
事件ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
持續時間: 2006 10月 232006 10月 26

出版系列

名字ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
國家/地區China
城市Shanghai
期間06-10-2306-10-26

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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