High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric

S. J. Young, C. H. Hsiao, S. J. Chang, L. W. Ji, T. H. Meen, T. P. Chen, K. W. Liu, K. J. Chen

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11 引文 斯高帕斯(Scopus)

摘要

The authors report the fabrication of ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) with a high quality SiO2 gate dielectric by photochemical vapor deposition (photo-CVD) on a sapphire substrate. Compared with ZnO-based metal-semiconductor FETs (MESFETs), it was found that the gate leakage current was decreased to more than two orders of magnitude by inserting the photo-CVD SiO2 gate dielectric between ZnO and gate metal. Besides, it was also found that the fabricated ZnO MOSFETs can achieve normal operation of FET, even operated at 150 °C. This could be attributed to the high quality of photo-CVD SiO2 layer. With a 2 μm gate length, the saturated Ids and maximum transconductance (Gm) were 61.1 mA/mm and 10.2 mS/mm for ZnO-based MOSFETs measured at room temperature, while 45.7 mA/mm and 7.67 mS/mm for that measured at 150 °C, respectively.

原文English
頁(從 - 到)147-149
頁數3
期刊Journal of Physics and Chemistry of Solids
72
發行號2
DOIs
出版狀態Published - 2011 二月

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 材料科學(全部)
  • 凝聚態物理學

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