High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide

S. J. Young, S. J. Chang, L. W. Ji, H. Hung, S. M. Wang, K. W. Liu, K. J. Chen, Z. S. Hu

研究成果: Conference contribution

原文English
主出版物標題2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs
出版狀態Published - 2009 十二月 1
事件2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States
持續時間: 2009 十二月 92009 十二月 11

出版系列

名字2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other2009 International Semiconductor Device Research Symposium, ISDRS '09
國家United States
城市College Park, MD
期間09-12-0909-12-11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

引用此

Young, S. J., Chang, S. J., Ji, L. W., Hung, H., Wang, S. M., Liu, K. W., Chen, K. J., & Hu, Z. S. (2009). High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide. 於 2009 International Semiconductor Device Research Symposium, ISDRS '09 [5378103] (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378103