@inproceedings{3bfe4debf59d4ad688dc43adcb6e8ece,
title = "High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide",
author = "Young, {S. J.} and Chang, {S. J.} and Ji, {L. W.} and H. Hung and Wang, {S. M.} and Liu, {K. W.} and Chen, {K. J.} and Hu, {Z. S.}",
year = "2009",
doi = "10.1109/ISDRS.2009.5378103",
language = "English",
isbn = "9781424460304",
series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",
booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",
note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",
}