High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide

S. J. Young; S. J. Chang; L. W. Ji; H. Hung; S. M. Wang; K. W. Liu; K. J. Chen; Z. S. Hu

doi:10.1109/ISDRS.2009.5378103

High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO₂ gate oxide

S. J. Young
, S. J. Chang
, L. W. Ji
, H. Hung
, S. M. Wang
, K. W. Liu
, K. J. Chen
, Z. S. Hu

研究成果: Conference contribution

原文	English
主出版物標題	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378103
出版狀態	Published - 2009
事件	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States 持續時間: 2009 12月 9 → 2009 12月 11

出版系列

名字	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
國家/地區	United States
城市	College Park, MD
期間	09-12-09 → 09-12-11

All Science Journal Classification (ASJC) codes

電氣與電子工程
電子、光磁材料

存取文件

10.1109/ISDRS.2009.5378103

其它文件與鏈接

引用此

Young, S. J., Chang, S. J., Ji, L. W., Hung, H., Wang, S. M., Liu, K. W., Chen, K. J., & Hu, Z. S. (2009). High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO₂ gate oxide. 於 2009 International Semiconductor Device Research Symposium, ISDRS '09 文章 5378103 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378103

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title = "High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide",

author = "Young, \{S. J.\} and Chang, \{S. J.\} and Ji, \{L. W.\} and H. Hung and Wang, \{S. M.\} and Liu, \{K. W.\} and Chen, \{K. J.\} and Hu, \{Z. S.\}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378103",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

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}

Young, SJ, Chang, SJ, Ji, LW, Hung, H, Wang, SM, Liu, KW, Chen, KJ & Hu, ZS 2009, High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO₂ gate oxide. 於 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378103, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 09-12-09. https://doi.org/10.1109/ISDRS.2009.5378103

TY - GEN

T1 - High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide

AU - Young, S. J.

AU - Chang, S. J.

AU - Ji, L. W.

AU - Hung, H.

AU - Wang, S. M.

AU - Liu, K. W.

AU - Chen, K. J.

AU - Hu, Z. S.

PY - 2009

Y1 - 2009

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UR - https://www.scopus.com/pages/publications/77949342997#tab=citedBy

U2 - 10.1109/ISDRS.2009.5378103

DO - 10.1109/ISDRS.2009.5378103

M3 - Conference contribution

AN - SCOPUS:77949342997

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -