Vertical-cavity top-emitting quantum well lasers are grown by molecular beam epitaxy. The active region consists of three 100 Å GaAs quantum wells separated by 80 Å Al0.3Ga0.7As barriers. Continuous wave lasing by current injection is maintained at temperatures up to 80°C. At room temperature, light output power more than 1 mW is obtained, and threshold currents are as low as 2 0 mA for 10µm devices. External differential quantum efficiencies are 50% averaged up to 0·4 mW. The single longitudinal and transverse modes are preserved up to ~0·8mW. The temperature dependence of the threshold current gives T0 as high as 330°C.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering