High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, X. P. Wang, M. F. Li, C. Zhu, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.

原文English
頁(從 - 到)292-294
頁數3
期刊IEEE Electron Device Letters
28
發行號4
DOIs
出版狀態Published - 2007 四月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

指紋 深入研究「High-temperature stable HfLaON p-MOSFETs with high-work-function Ir <sub>3</sub>Si gate」主題。共同形成了獨特的指紋。

引用此