High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

C. H. Wu; B. F. Hung; Albert Chin; S. J. Wang; X. P. Wang; M. F. Li; C. Zhu; F. Y. Yen; Y. T. Hou; Y. Jin; H. J. Tao; S. C. Chen; M. S. Liang

doi:10.1109/LED.2007.892367

High-temperature stable HfLaON p-MOSFETs with high-work-function Ir ₃Si gate

C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, X. P. Wang, M. F. Li, C. Zhu, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

微電子工程研究所

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

We report a novel 1000°C stable HfLaON p-MOSFET with Ir₃Si gate. Low leakage current of 1.8 × 10^-5 A/cm² at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm²/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.

原文	English
頁（從 - 到）	292-294
頁數	3
期刊	IEEE Electron Device Letters
卷	28
發行號	4
DOIs	https://doi.org/10.1109/LED.2007.892367
出版狀態	Published - 2007 四月

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.892367

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title = "High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate",

abstract = "We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.",

author = "Wu, {C. H.} and Hung, {B. F.} and Albert Chin and Wang, {S. J.} and Wang, {X. P.} and Li, {M. F.} and C. Zhu and Yen, {F. Y.} and Hou, {Y. T.} and Y. Jin and Tao, {H. J.} and Chen, {S. C.} and Liang, {M. S.}",

note = "Funding Information: Manuscript received October 26, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Grant 94-2215-E-009-062. The review of this letter was arranged by Editor A. Chatterjee.",

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T1 - High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

AU - Wu, C. H.

AU - Hung, B. F.

AU - Chin, Albert

AU - Wang, S. J.

AU - Wang, X. P.

AU - Li, M. F.

AU - Zhu, C.

AU - Yen, F. Y.

AU - Hou, Y. T.

AU - Jin, Y.

AU - Tao, H. J.

AU - Chen, S. C.

AU - Liang, M. S.

N1 - Funding Information: Manuscript received October 26, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Grant 94-2215-E-009-062. The review of this letter was arranged by Editor A. Chatterjee.

PY - 2007/4

Y1 - 2007/4

N2 - We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.

AB - We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.

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