High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference

C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, W. J. Chen, X. P. Wang, M. F. Li, C. Zhu, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

研究成果: Conference contribution

26 引文 斯高帕斯(Scopus)

摘要

We report novel 1000°C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Φm-eff of 5.08 and 4.24 eV, low Vt of -0.10 and 0.18 V, high mobility of 84 and 217 cm2/Vs at 1.6 nm EOT, and small 85°C BTI <20 mV (10 MV/cm for 1 hr) are measured.

原文English
主出版物標題2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
出版狀態Published - 2006
事件2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
持續時間: 2006 十二月 102006 十二月 13

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
國家United States
城市San Francisco, CA
期間06-12-1006-12-13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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