High-temperature thermal stability performance in δ-doped In0.425Al0.575As-In0.65 Ga0.35As metamorphic HEMT

Wei Chou Hsu, Yeong Jia Chen, Ching Sung Lee, Tzong Bin Wang, Yu Shyan Lin, Chang Luen Wu

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel δ-doped In0.425Al0.575As-In0.65Ga 0.35As-GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (gm), drain saturation current density (IDSS), on/off-state breakdown voltages (BVon/ BVGD), turn-on voltage (Von), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65 × 200 μm2. The cutoff frequency (fT) anal maximum oscillation frequency (fmax), at 300 K, are 55.4 and 77.5 GHz at VDS = 2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (∂V th/∂T) is superiorly as low as to 0.45 mV/K.

原文English
頁(從 - 到)59-61
頁數3
期刊IEEE Electron Device Letters
26
發行號2
DOIs
出版狀態Published - 2005 2月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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