TY - JOUR
T1 - High-throughput electrical characterization of nanomaterials from room to cryogenic temperatures
AU - Smith, Luke W.
AU - Batey, Jack O.
AU - Alexander-Webber, Jack A.
AU - Fan, Ye
AU - Hsieh, Yu Chiang
AU - Fung, S.
AU - Jevtics, Dimitars
AU - Robertson, Joshua
AU - Guilhabert, Benoit J.E.
AU - Strain, Michael J.
AU - Dawson, Martin D.
AU - Hurtado, Antonio
AU - Griffiths, Jonathan P.
AU - Beere, Harvey E.
AU - Jagadish, Chennupati
AU - Burton, Oliver J.
AU - Hofmann, Stephan
AU - Chen, Tse Ming
AU - Ritchie, David A.
AU - Kelly, Michael
AU - Joyce, Hannah J.
AU - Smith, Charles G.
N1 - Funding Information:
This work is supported by the Engineering and Physical Sciences Research Council Grant No. EP/R029075/1. The authors thank G. Stefanou for SEM imaging of CVD graphene devices. J.A.-W. acknowledges the support of his Research Fellowship from the Royal Commission for the Exhibition of 1851 and Royal Society Dorothy Hodgkin Research Fellowship. Y.F. and S.H. acknowledge funding from EPSRC (EP/P005152/1). O.J.B. acknowledges an EPSRC Doctoral Training Award (EP/M508007/1). C.J. thanks the Australian Research Council for financial support and Australian National Fabrication Facility, ACT node, for facility support. The Strathclyde team acknowledges support by the European Commission (Grant 828841-ChipAI-H2020-FETOPEN-2018-2020) and the UK’s EPSRC (EP/N509760, EP/R03480X/1, and EP/P013597/1). L.W.S., Y.-C.H., S.-J.F., and T.M.C. acknowledge support from the Ministry of Science and Technology (Taiwan).
Publisher Copyright:
© 2020 American Chemical Society.
PY - 2020/11/24
Y1 - 2020/11/24
N2 - We present multiplexer methodology and hardware for nanoelectronic device characterization. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterials-graphene and semiconductor nanowires-integrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapor deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to nonmultiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micromechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μFE = 880/3180 cm2 V-1 s-1 (lower/upper bound), subthreshold swing 430 mV dec-1, and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices. In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-of-concept demonstration of a versatile platform for scalable fabrication and cryogenic characterization of nanomaterial device arrays, which is compatible with a broad range of nanomaterials, transfer techniques, and device integration strategies from the forefront of quantum technology research.
AB - We present multiplexer methodology and hardware for nanoelectronic device characterization. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterials-graphene and semiconductor nanowires-integrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapor deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to nonmultiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micromechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μFE = 880/3180 cm2 V-1 s-1 (lower/upper bound), subthreshold swing 430 mV dec-1, and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices. In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-of-concept demonstration of a versatile platform for scalable fabrication and cryogenic characterization of nanomaterial device arrays, which is compatible with a broad range of nanomaterials, transfer techniques, and device integration strategies from the forefront of quantum technology research.
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U2 - 10.1021/acsnano.0c05622
DO - 10.1021/acsnano.0c05622
M3 - Article
C2 - 33104341
AN - SCOPUS:85096237723
SN - 1936-0851
VL - 14
SP - 15293
EP - 15305
JO - ACS nano
JF - ACS nano
IS - 11
ER -