High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide

Chun Kai Wang, Tien Kun Lin, Yu Zung Chiou, Shoou Jinn Chang, Yan Kuin Su, Cheng Huang Kuo, Tsun Kai Ko

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)


High quality SiO2 was successfully deposited on GaN by photochemical vapour deposition (photo-CVD) using a D2 lamp as the excitation source. It was found that the interface state density was only 8.4 × 1011 cm-2 eV-1 for photo-CVD SiO2 layers on GaN prepared at 300°C. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors were fabricated with photo-CVD oxide as the insulating layer. It was found that room temperature saturation Ids, maximum gm and gate voltage swing of the devices were 1220 mA mm-1, 240 mS mm-1 and 4.5 V, respectively. Even at an evaluated temperature of 300°C, the device still exhibits the maximum transconductance of 180 mS mm-1.

頁(從 - 到)1033-1036
期刊Semiconductor Science and Technology
出版狀態Published - 2003 12月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學


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