High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures

Le Zhi Wang, Xiang Li, Taisuke Sasaki, Kin Wong, Guo Qiang Yu, Shou Zhong Peng, Chao Zhao, Tadakatsu Ohkubo, Kazuhiro Hono, Wei Sheng Zhao, Kang Long Wang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and interface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m2, VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2–3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for high-density voltage-controlled spintronic devices.

原文English
文章編號277512
期刊Science China: Physics, Mechanics and Astronomy
63
發行號7
DOIs
出版狀態Published - 2020 七月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

指紋 深入研究「High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures」主題。共同形成了獨特的指紋。

引用此