High work function IrxSi gates on HfAlON p-MOSFETs

C. H. Wu, D. S. Yu, Albert Chin, S. J. Wang, M. F. Li, C. Zhu, B. F. Hung, S. P. McAlister

研究成果: Article

18 引文 斯高帕斯(Scopus)

摘要

We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-nm equivalent oxide thickness. After 950 °C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm2/V·s, and the advantage of being process compatible to the current VLSI fabrication line.

原文English
頁(從 - 到)90-92
頁數3
期刊IEEE Electron Device Letters
27
發行號2
DOIs
出版狀態Published - 2006 二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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