摘要
This paper reports the growth, fabrication and characterization of integrated Ge detectors with rib waveguides based on SOI technology. The MBE Ge diode structures were first grown on different graded buffers on SOI wafers. These structures were then fabricated into individual and integrated diodes with various kinds of rib waveguides. Analysis of the performance of the integrated detectors indicates that Ge detectors with quantum efficiency over 70% can be achieved at 1.55um. Major obstacle for practical applications of these Ge detectors will be discussed.
原文 | English |
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頁(從 - 到) | 114-117 |
頁數 | 4 |
期刊 | Proceedings of SPIE - The International Society for Optical Engineering |
卷 | 4293 |
DOIs | |
出版狀態 | Published - 2001 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 凝聚態物理學
- 電腦科學應用
- 應用數學
- 電氣與電子工程