Highly ESD-reliable, nitride-based heterostructure p-i-n photodetectors with a p-AlGaN blocking layer

C. H. Liu, T. K. Lam, T. K. Ko, S. J. Chang, Y. X. Sun

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Nitride-based p-i-n photodetectors (PDs) with a p-AlGaN blocking layer were proposed, fabricated, and characterized. It was found that peak responsivities of the PDs with and without a p-AlGaN blocking layer both occurred at 355 nm and with the same value of about 0.076 A/W at zero bias. It was also found that reverse leakage current increased by 7 orders of magnitude after -1000 V electrostatic discharge (ESD) stressing for a conventional homostructure p-i-n PD. In contrast, the heterostructure PD with a 300 nm thick p-Al0.10 Ga0.9 N blocking layer can endure an extremely large -8000 V ESD surge.

原文English
頁(從 - 到)H232-H234
期刊Journal of the Electrochemical Society
155
發行號4
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

指紋 深入研究「Highly ESD-reliable, nitride-based heterostructure p-i-n photodetectors with a p-AlGaN blocking layer」主題。共同形成了獨特的指紋。

引用此