A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.
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