Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor

H. J. Pan, K. W. Lin, K. H. Yu, C. C. Cheng, K. B. Thei, W. C. Liu, H. I. Chen

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.

原文English
頁(從 - 到)92-93
頁數2
期刊Electronics Letters
38
發行號2
DOIs
出版狀態Published - 2002 一月 17

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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