Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays

Chih-Lung Lin, Chia En Wu, Fu Hsing Chen, Po Cheng Lai, Mao Hsun Cheng

研究成果: Article

11 引文 (Scopus)

摘要

This paper presents a new bidirectional gate driver circuit that utilizes amorphous indium-gallium-zinc oxide thin-film transistors (TFTs). To ensure the compactness of the display system, bidirectional transmission function is implemented by adjusting the sequence of clock signals without extra controlling signal. The lifetime of the proposed gate driver circuit is increased by reducing the drain bias stress of the input TFTs. The measurement results indicate that the proposed gate driver circuit can remain stable for more than 812 h at 70 °C, demonstrating its feasibility and long-term reliability for full high-definition resolution.

原文English
文章編號7462212
頁(從 - 到)2405-2411
頁數7
期刊IEEE Transactions on Electron Devices
63
發行號6
DOIs
出版狀態Published - 2016 六月 1

指紋

Thin film transistors
Display devices
Networks (circuits)
Zinc Oxide
Gallium
Indium
Zinc oxide
Oxide films
Clocks

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Lin, Chih-Lung ; Wu, Chia En ; Chen, Fu Hsing ; Lai, Po Cheng ; Cheng, Mao Hsun. / Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays. 於: IEEE Transactions on Electron Devices. 2016 ; 卷 63, 編號 6. 頁 2405-2411.
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Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays. / Lin, Chih-Lung; Wu, Chia En; Chen, Fu Hsing; Lai, Po Cheng; Cheng, Mao Hsun.

於: IEEE Transactions on Electron Devices, 卷 63, 編號 6, 7462212, 01.06.2016, p. 2405-2411.

研究成果: Article

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