Highly Reliable Nitride-Based LEDs with SPS+ITO Upper Contacts

S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, J. C. Ke

研究成果: Article

129 引文 斯高帕斯(Scopus)

摘要

Nitride-based blue light emitting diodes (LEDs) with an n+ -short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitride-based LEDs with Ni/An upper contacts, it was found that we could achieve a 60% increase in electro-luminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (IR) by the deposition of a SiO2 layer on top of the ITO LEDs.

原文English
頁(從 - 到)1439-1443
頁數5
期刊IEEE Journal of Quantum Electronics
39
發行號11
DOIs
出版狀態Published - 2003 十一月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此

Chang, S. J., Chang, C. S., Su, Y. K., Chuang, R. W., Lin, Y. C., Shei, S. C., Lo, H. M., Lin, H. Y., & Ke, J. C. (2003). Highly Reliable Nitride-Based LEDs with SPS+ITO Upper Contacts. IEEE Journal of Quantum Electronics, 39(11), 1439-1443. https://doi.org/10.1109/JQE.2003.818312