@article{949c58c4b6414c3db0e3d534ea5cd5f2,
title = "Highly Reliable Nitride-Based LEDs with SPS+ITO Upper Contacts",
abstract = "Nitride-based blue light emitting diodes (LEDs) with an n+ -short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitride-based LEDs with Ni/An upper contacts, it was found that we could achieve a 60% increase in electro-luminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (IR) by the deposition of a SiO2 layer on top of the ITO LEDs.",
author = "Chang, {S. J.} and Chang, {C. S.} and Su, {Y. K.} and Chuang, {R. W.} and Lin, {Y. C.} and Shei, {S. C.} and Lo, {H. M.} and Lin, {H. Y.} and Ke, {J. C.}",
note = "Funding Information: Manuscript received June 10, 2003; revised July 16, 2003. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, and Y. C. Lin are with the Institute of Microelectronics and the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke are with the South Epitaxy Corporation, Hsin-Shi 744, Taiwan, R.O.C. Digital Object Identifier 10.1109/JQE.2003.818312",
year = "2003",
month = nov,
doi = "10.1109/JQE.2003.818312",
language = "English",
volume = "39",
pages = "1439--1443",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}