Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell

Shi Xiang Chen, Sheng Po Chang, Wei Kang Hsieh, Shoou Jinn Chang, Chih Chien Lin

研究成果: Article

1 引文 (Scopus)

摘要

We discuss the fabrication procedure and device characteristics of ITO/Zn2TiO4/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics with no obvious degradation and were individually distinguished after 10 000 s at a read voltage of 100 mV. The multilevel memory effect can be attributed to the combination of the radial growth of filaments and the formation of conductive filaments when applying different compliance current values during the set process. The set and reset voltages of the ITO/Zn2TiO4/Pt RRAM device were maintained within ±1 V. The device performed well at low operation voltages. The mechanisms of multilevel resistive switching characteristics were investigated to illustrate the multilevel carrier conduction phenomenon associated with Zn2TiO4-based RRAM devices. In this study, our group illustrated the application of zinc titanate (Zn2TiO4) in non-volatile memories for the first time.

原文English
頁(從 - 到)17622-17628
頁數7
期刊RSC Advances
8
發行號32
DOIs
出版狀態Published - 2018 一月 1

指紋

Data storage equipment
Electric potential
Zinc
Fabrication
Degradation
Temperature
Compliance

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

引用此文

@article{fdfba26d8be748238b901f6bef8cd56d,
title = "Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell",
abstract = "We discuss the fabrication procedure and device characteristics of ITO/Zn2TiO4/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics with no obvious degradation and were individually distinguished after 10 000 s at a read voltage of 100 mV. The multilevel memory effect can be attributed to the combination of the radial growth of filaments and the formation of conductive filaments when applying different compliance current values during the set process. The set and reset voltages of the ITO/Zn2TiO4/Pt RRAM device were maintained within ±1 V. The device performed well at low operation voltages. The mechanisms of multilevel resistive switching characteristics were investigated to illustrate the multilevel carrier conduction phenomenon associated with Zn2TiO4-based RRAM devices. In this study, our group illustrated the application of zinc titanate (Zn2TiO4) in non-volatile memories for the first time.",
author = "Chen, {Shi Xiang} and Chang, {Sheng Po} and Hsieh, {Wei Kang} and Chang, {Shoou Jinn} and Lin, {Chih Chien}",
year = "2018",
month = "1",
day = "1",
doi = "10.1039/c8ra03181a",
language = "English",
volume = "8",
pages = "17622--17628",
journal = "RSC Advances",
issn = "2046-2069",
publisher = "Royal Society of Chemistry",
number = "32",

}

Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell. / Chen, Shi Xiang; Chang, Sheng Po; Hsieh, Wei Kang; Chang, Shoou Jinn; Lin, Chih Chien.

於: RSC Advances, 卷 8, 編號 32, 01.01.2018, p. 17622-17628.

研究成果: Article

TY - JOUR

T1 - Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell

AU - Chen, Shi Xiang

AU - Chang, Sheng Po

AU - Hsieh, Wei Kang

AU - Chang, Shoou Jinn

AU - Lin, Chih Chien

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We discuss the fabrication procedure and device characteristics of ITO/Zn2TiO4/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics with no obvious degradation and were individually distinguished after 10 000 s at a read voltage of 100 mV. The multilevel memory effect can be attributed to the combination of the radial growth of filaments and the formation of conductive filaments when applying different compliance current values during the set process. The set and reset voltages of the ITO/Zn2TiO4/Pt RRAM device were maintained within ±1 V. The device performed well at low operation voltages. The mechanisms of multilevel resistive switching characteristics were investigated to illustrate the multilevel carrier conduction phenomenon associated with Zn2TiO4-based RRAM devices. In this study, our group illustrated the application of zinc titanate (Zn2TiO4) in non-volatile memories for the first time.

AB - We discuss the fabrication procedure and device characteristics of ITO/Zn2TiO4/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics with no obvious degradation and were individually distinguished after 10 000 s at a read voltage of 100 mV. The multilevel memory effect can be attributed to the combination of the radial growth of filaments and the formation of conductive filaments when applying different compliance current values during the set process. The set and reset voltages of the ITO/Zn2TiO4/Pt RRAM device were maintained within ±1 V. The device performed well at low operation voltages. The mechanisms of multilevel resistive switching characteristics were investigated to illustrate the multilevel carrier conduction phenomenon associated with Zn2TiO4-based RRAM devices. In this study, our group illustrated the application of zinc titanate (Zn2TiO4) in non-volatile memories for the first time.

UR - http://www.scopus.com/inward/record.url?scp=85047273159&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047273159&partnerID=8YFLogxK

U2 - 10.1039/c8ra03181a

DO - 10.1039/c8ra03181a

M3 - Article

AN - SCOPUS:85047273159

VL - 8

SP - 17622

EP - 17628

JO - RSC Advances

JF - RSC Advances

SN - 2046-2069

IS - 32

ER -