Highly stable ultrathin TiO2 based resistive random access memory with low operation voltage

Shi Xiang Chen, Sheng Po Chang, Shoou Jinn Chang, Wei Kang Hsieh, Cheng Han Lin

研究成果: Article

1 引文 (Scopus)

摘要

In this article, we display the fabrication methods and characterizations of the ITO/TiO2/Pt resistive random access memory (RRAM). By transmission electron microscopy (TEM) analysis, the fabricated TiO2 thin film of our RRAM device was confirmed to be amorphous instead of other common crystal direction. The RRAM here shows bipolar resistive switching characteristic for over a hundred times switching cycles with a resistance ratio (RHRS/RLRS) of more than 1 order and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 2 orders. We found that conduction mechanism was dominated only by ohmic conduction in both set and reset procedure. The set and reset voltage of the ITO/amorphous TiO2 (a-TiO2)/Pt of this article were around 0.6 and -0.5 V, make it state-of-the-art in low operation voltage application.

原文English
頁(從 - 到)Q3183-Q3188
期刊ECS Journal of Solid State Science and Technology
7
發行號7
DOIs
出版狀態Published - 2018 一月 1

指紋

Data storage equipment
Electric potential
Transmission electron microscopy
Fabrication
Thin films
Crystals
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

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abstract = "In this article, we display the fabrication methods and characterizations of the ITO/TiO2/Pt resistive random access memory (RRAM). By transmission electron microscopy (TEM) analysis, the fabricated TiO2 thin film of our RRAM device was confirmed to be amorphous instead of other common crystal direction. The RRAM here shows bipolar resistive switching characteristic for over a hundred times switching cycles with a resistance ratio (RHRS/RLRS) of more than 1 order and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 2 orders. We found that conduction mechanism was dominated only by ohmic conduction in both set and reset procedure. The set and reset voltage of the ITO/amorphous TiO2 (a-TiO2)/Pt of this article were around 0.6 and -0.5 V, make it state-of-the-art in low operation voltage application.",
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Highly stable ultrathin TiO2 based resistive random access memory with low operation voltage. / Chen, Shi Xiang; Chang, Sheng Po; Chang, Shoou Jinn; Hsieh, Wei Kang; Lin, Cheng Han.

於: ECS Journal of Solid State Science and Technology, 卷 7, 編號 7, 01.01.2018, p. Q3183-Q3188.

研究成果: Article

TY - JOUR

T1 - Highly stable ultrathin TiO2 based resistive random access memory with low operation voltage

AU - Chen, Shi Xiang

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Hsieh, Wei Kang

AU - Lin, Cheng Han

PY - 2018/1/1

Y1 - 2018/1/1

N2 - In this article, we display the fabrication methods and characterizations of the ITO/TiO2/Pt resistive random access memory (RRAM). By transmission electron microscopy (TEM) analysis, the fabricated TiO2 thin film of our RRAM device was confirmed to be amorphous instead of other common crystal direction. The RRAM here shows bipolar resistive switching characteristic for over a hundred times switching cycles with a resistance ratio (RHRS/RLRS) of more than 1 order and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 2 orders. We found that conduction mechanism was dominated only by ohmic conduction in both set and reset procedure. The set and reset voltage of the ITO/amorphous TiO2 (a-TiO2)/Pt of this article were around 0.6 and -0.5 V, make it state-of-the-art in low operation voltage application.

AB - In this article, we display the fabrication methods and characterizations of the ITO/TiO2/Pt resistive random access memory (RRAM). By transmission electron microscopy (TEM) analysis, the fabricated TiO2 thin film of our RRAM device was confirmed to be amorphous instead of other common crystal direction. The RRAM here shows bipolar resistive switching characteristic for over a hundred times switching cycles with a resistance ratio (RHRS/RLRS) of more than 1 order and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 2 orders. We found that conduction mechanism was dominated only by ohmic conduction in both set and reset procedure. The set and reset voltage of the ITO/amorphous TiO2 (a-TiO2)/Pt of this article were around 0.6 and -0.5 V, make it state-of-the-art in low operation voltage application.

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