摘要
We report for the first time the fabrication of a ZnO PD by SILAR involving the use of ethylene glycol. The average diameter of ZnO was around 100 nm. In addition, the obtained hexagonal ZnO thin films grew along the c-axis and with stronger intensity at the peak (002) plane; further, the films had a smooth surface morphology and showed high transparency in the visible spectral range. The fabricated ZnO PD was visible-blind with a cutoff wavelength around 350 nm. Under a 10 V applied bias, the measured dark current was 2.58μA and the photocurrent was 803 μA, and hence, the responsivities were 68.5 A/W for the ZnO PD.
原文 | English |
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頁(從 - 到) | 6425-6432 |
頁數 | 8 |
期刊 | International Journal of Electrochemical Science |
卷 | 8 |
發行號 | 5 |
出版狀態 | Published - 2013 |
All Science Journal Classification (ASJC) codes
- 電化學