摘要
Measurements of thermal conductivity versus temperature over a broad range of doping in (Formula presented) and (Formula presented) suggest that small domains of localized holes develop for hole concentrations near (Formula presented) The data imply a mechanism for localization that is intrinsic to the (Formula presented) planes and is enhanced via pinning associated with oxygen-vacancy clusters.
原文 | English |
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頁(從 - 到) | 3823-3826 |
頁數 | 4 |
期刊 | Physical Review B - Condensed Matter and Materials Physics |
卷 | 59 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 1999 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 凝聚態物理學