Measurements of thermal conductivity versus temperature over a broad range of doping in (Formula presented) and (Formula presented) suggest that small domains of localized holes develop for hole concentrations near (Formula presented) The data imply a mechanism for localization that is intrinsic to the (Formula presented) planes and is enhanced via pinning associated with oxygen-vacancy clusters.
|頁（從 - 到）||3823-3826|
|期刊||Physical Review B - Condensed Matter and Materials Physics|
|出版狀態||Published - 1999|
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