Hole traps in p-type electrochemically deposited CdTe thin films

S. S. Ou, A. Bindal, O. M. Stafsudd, K. L. Wang, B. M. Basol

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

Deep level transient spectroscopy and photoluminescence measurements were performed for the first time on electrodeposited n-CdS/p-CdTe thin film solar cells. The observed levels were hole traps located at 0.2, 0.35, and 0.54 eV above the valence band. The nature of these hole traps can be attributed to the generation of Cd vacancies during the heat treatment step, which was used in device fabrication, to convert the as-deposited n-type films into p-type layers.

原文English
頁(從 - 到)1020-1022
頁數3
期刊Journal of Applied Physics
55
發行號4
DOIs
出版狀態Published - 1984

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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