Hot electron effects on AlGaAs/InGaAs/GaAs PHEMT's under accelerated DC stresses and comparison with InGaP PHEMT's

H. K. Huang, C. S. Wang, Y. H. Wang, C. L. Wu, C. S. Chang

研究成果: Conference contribution

摘要

The influence of the hot electron accelerated stress on DC characteristics of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMT's) is found to be related to the Schottky characteristics. The studies of reverse Schottky characteristics before and after stress are presented and found to be related to the following two major mechanisms: (1) the widening of the depletion under the gate after stress; (2) the influence of the carriers trapping under the gate after stress, which is mainly due to DX-centers. A new model based on the image force of Schottky barrier on hot electrons effects on leakage gate current is proposed. Both AlGaAs and InGaP PHEMT's with the extreme small variation of minimum noise figure and associated power gain measured at 12 GHz under hot electron accelerated stress will be investigated. Comparing the noise performance of AlGaAs PHEMT's with InGaP PHEMT's, the higher reliability in InGaP low noise PHEMT's will be demonstrated.

原文English
主出版物標題2003 GaAs Reliability Workshop, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面57-68
頁數12
ISBN(電子)0790801043
DOIs
出版狀態Published - 2003
事件2003 GaAs Reliability Workshop - San Diego, United States
持續時間: 2003 十一月 9 → …

出版系列

名字GaAs Reliability Workshop, Proceedings
2003-January

Other

Other2003 GaAs Reliability Workshop
國家/地區United States
城市San Diego
期間03-11-09 → …

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料
  • 凝聚態物理學
  • 安全、風險、可靠性和品質

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