How tantalum proceeds phase change on tantalum nitride underlayer with sequential Ar plasma treatment

Jung Chih Tsao, Chuan Pu Liu, Hsin Chiao Fang, Ying Lang Wang

研究成果: Review article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Tantalum can change its phase from high resistive β-Ta to low resistive α-Ta phase on a TaN substrate with sequential Ar plasma treatment on the TaN layer surface prior to Ta deposition. The underlined mechanism of phase evolution is proposed based on systematic microstructure examination by high-resolution transmission electron microscopy. The images show that, with argon treatment, the upper part of the TaN film is transformed from amorphous-TaN to a composite phase of bcc-Ta(N) and amorphous-TaN mixture, which is also confirmed by X-ray diffraction patterns. The composite film composed of less nitrogen provides an ideal cubic matrix to confine the stable α-Ta phase to be grown. The α-Ta/bcc-Ta(N) film obtained by proper argon treatment results in film resistivity 10 times lower than the traditional Ta/TaN film.

原文English
頁(從 - 到)689-693
頁數5
期刊Materials Chemistry and Physics
137
發行號3
DOIs
出版狀態Published - 2013 一月 15

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學

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