Hydrogen sensing characteristics of a metal-oxide-semiconductor diode with bimetallic catalysts and a gaox dielectric

Hong Yu Chen, Wen-Chau Liu

研究成果: Article

摘要

A new metal-oxide-semiconductor (MOS) diode with bimetallic catalysts and a GaOx dielectric is employed herein to fabricate a hydrogen sensor. Bimetallic catalysts, including Pt nanoparticles (NPs) and a Pd thin film, are formed by the proper vacuum thermal evaporation (VTE) approach, and a GaOx dielectric is produced by H2O2 treatment on the GaN surface. The presence of this bimetallic structure can effectively increase the surface area-to-volume ratio and provide a 'spill-over' effect. This can substantially enhance the dissociation and adsorption of hydrogen molecules and atoms. The use of a GaOx dielectric effectively suppresses the surface leakage current and increases the adsorption sites for hydrogen atoms. Experimentally, excellent hydrogen sensing properties, including a very high sensing response of 1.1 \times 10^{7} under 1% H2/air gas at 300 K, an extremely low detection level (≤100 ppb H2/air), a widespread hydrogen concentration sensing range, and a relatively fast sensing speed, were obtained. From a thermodynamic analysis, it is clear that the hydrogen adsorption of the studied device is an exothermic reaction. Therefore, based on the above-mentioned advantages, the studied Pt NP/Pd thin film/GaOx/GaN-based MOS diode shows promise for high-performance hydrogen sensing applications.

原文English
文章編號8727417
頁(從 - 到)3144-3150
頁數7
期刊IEEE Transactions on Electron Devices
66
發行號7
DOIs
出版狀態Published - 2019 七月 1

指紋

Semiconductor diodes
Hydrogen
Metals
Catalysts
Adsorption
Nanoparticles
Thin films
Atoms
Vacuum evaporation
Exothermic reactions
Thermal evaporation
Hazardous materials spills
Air
Oxide semiconductors
Leakage currents
Gases
Thermodynamics
Molecules
Sensors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

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abstract = "A new metal-oxide-semiconductor (MOS) diode with bimetallic catalysts and a GaOx dielectric is employed herein to fabricate a hydrogen sensor. Bimetallic catalysts, including Pt nanoparticles (NPs) and a Pd thin film, are formed by the proper vacuum thermal evaporation (VTE) approach, and a GaOx dielectric is produced by H2O2 treatment on the GaN surface. The presence of this bimetallic structure can effectively increase the surface area-to-volume ratio and provide a 'spill-over' effect. This can substantially enhance the dissociation and adsorption of hydrogen molecules and atoms. The use of a GaOx dielectric effectively suppresses the surface leakage current and increases the adsorption sites for hydrogen atoms. Experimentally, excellent hydrogen sensing properties, including a very high sensing response of 1.1 \times 10^{7} under 1{\%} H2/air gas at 300 K, an extremely low detection level (≤100 ppb H2/air), a widespread hydrogen concentration sensing range, and a relatively fast sensing speed, were obtained. From a thermodynamic analysis, it is clear that the hydrogen adsorption of the studied device is an exothermic reaction. Therefore, based on the above-mentioned advantages, the studied Pt NP/Pd thin film/GaOx/GaN-based MOS diode shows promise for high-performance hydrogen sensing applications.",
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AB - A new metal-oxide-semiconductor (MOS) diode with bimetallic catalysts and a GaOx dielectric is employed herein to fabricate a hydrogen sensor. Bimetallic catalysts, including Pt nanoparticles (NPs) and a Pd thin film, are formed by the proper vacuum thermal evaporation (VTE) approach, and a GaOx dielectric is produced by H2O2 treatment on the GaN surface. The presence of this bimetallic structure can effectively increase the surface area-to-volume ratio and provide a 'spill-over' effect. This can substantially enhance the dissociation and adsorption of hydrogen molecules and atoms. The use of a GaOx dielectric effectively suppresses the surface leakage current and increases the adsorption sites for hydrogen atoms. Experimentally, excellent hydrogen sensing properties, including a very high sensing response of 1.1 \times 10^{7} under 1% H2/air gas at 300 K, an extremely low detection level (≤100 ppb H2/air), a widespread hydrogen concentration sensing range, and a relatively fast sensing speed, were obtained. From a thermodynamic analysis, it is clear that the hydrogen adsorption of the studied device is an exothermic reaction. Therefore, based on the above-mentioned advantages, the studied Pt NP/Pd thin film/GaOx/GaN-based MOS diode shows promise for high-performance hydrogen sensing applications.

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