Hydrogen sensing characteristics of a metal-oxide-semiconductor diode with bimetallic catalysts and a gaox dielectric

Hong Yu Chen, Wen Chau Liu

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A new metal-oxide-semiconductor (MOS) diode with bimetallic catalysts and a GaOx dielectric is employed herein to fabricate a hydrogen sensor. Bimetallic catalysts, including Pt nanoparticles (NPs) and a Pd thin film, are formed by the proper vacuum thermal evaporation (VTE) approach, and a GaOx dielectric is produced by H2O2 treatment on the GaN surface. The presence of this bimetallic structure can effectively increase the surface area-to-volume ratio and provide a 'spill-over' effect. This can substantially enhance the dissociation and adsorption of hydrogen molecules and atoms. The use of a GaOx dielectric effectively suppresses the surface leakage current and increases the adsorption sites for hydrogen atoms. Experimentally, excellent hydrogen sensing properties, including a very high sensing response of 1.1 \times 10^{7} under 1% H2/air gas at 300 K, an extremely low detection level (≤100 ppb H2/air), a widespread hydrogen concentration sensing range, and a relatively fast sensing speed, were obtained. From a thermodynamic analysis, it is clear that the hydrogen adsorption of the studied device is an exothermic reaction. Therefore, based on the above-mentioned advantages, the studied Pt NP/Pd thin film/GaOx/GaN-based MOS diode shows promise for high-performance hydrogen sensing applications.

原文English
文章編號8727417
頁(從 - 到)3144-3150
頁數7
期刊IEEE Transactions on Electron Devices
66
發行號7
DOIs
出版狀態Published - 2019 七月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

指紋 深入研究「Hydrogen sensing characteristics of a metal-oxide-semiconductor diode with bimetallic catalysts and a gao<sub>x</sub> dielectric」主題。共同形成了獨特的指紋。

引用此