Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode

Huey Ing Chen, Kai Chieh Chuang, Ching Hong Chang, Wei Cheng Chen, I. Ping Liu, Wen Chau Liu

研究成果: Article

13 引文 (Scopus)

摘要

Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode-type sensor are comprehensively studied. The AlGaOxdielectric layer is formed by an appropriate hydrogen peroxide (H2O2) treatment on the surface of the AlGaN layer. Experimentally, an extremely high hydrogen sensing response of 3.85 × 105(under an introduced 1% H2/air gas) and a very low detection limit of 1 ppm H2/air gas are obtained at 300 K. This enhanced sensing performance is mainly caused by the effective dissociation of hydrogen molecules based on the presence of the AlGaOxlayer. A response (recovery) time constant of 33(17) s is found upon exposure to 1% H2/air gas at 300 K. The influence of humidity on the hydrogen sensing performance is studied in this work. Based on the improved properties, the studied device could serve as a candidate for high-performance hydrogen sensing applications.

原文English
頁(從 - 到)408-414
頁數7
期刊Sensors and Actuators, B: Chemical
246
DOIs
出版狀態Published - 2017 一月 1

指紋

Schottky diodes
Hydrogen
Diodes
hydrogen
Gases
Air
air
gases
Hydrogen peroxide
Hydrogen Peroxide
Atmospheric humidity
hydrogen peroxide
time constant
aluminum gallium nitride
humidity
Recovery
recovery
Molecules
dissociation
Sensors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

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abstract = "Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode-type sensor are comprehensively studied. The AlGaOxdielectric layer is formed by an appropriate hydrogen peroxide (H2O2) treatment on the surface of the AlGaN layer. Experimentally, an extremely high hydrogen sensing response of 3.85 × 105(under an introduced 1{\%} H2/air gas) and a very low detection limit of 1 ppm H2/air gas are obtained at 300 K. This enhanced sensing performance is mainly caused by the effective dissociation of hydrogen molecules based on the presence of the AlGaOxlayer. A response (recovery) time constant of 33(17) s is found upon exposure to 1{\%} H2/air gas at 300 K. The influence of humidity on the hydrogen sensing performance is studied in this work. Based on the improved properties, the studied device could serve as a candidate for high-performance hydrogen sensing applications.",
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Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode. / Chen, Huey Ing; Chuang, Kai Chieh; Chang, Ching Hong; Chen, Wei Cheng; Liu, I. Ping; Liu, Wen Chau.

於: Sensors and Actuators, B: Chemical, 卷 246, 01.01.2017, p. 408-414.

研究成果: Article

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AU - Chuang, Kai Chieh

AU - Chang, Ching Hong

AU - Chen, Wei Cheng

AU - Liu, I. Ping

AU - Liu, Wen Chau

PY - 2017/1/1

Y1 - 2017/1/1

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AB - Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode-type sensor are comprehensively studied. The AlGaOxdielectric layer is formed by an appropriate hydrogen peroxide (H2O2) treatment on the surface of the AlGaN layer. Experimentally, an extremely high hydrogen sensing response of 3.85 × 105(under an introduced 1% H2/air gas) and a very low detection limit of 1 ppm H2/air gas are obtained at 300 K. This enhanced sensing performance is mainly caused by the effective dissociation of hydrogen molecules based on the presence of the AlGaOxlayer. A response (recovery) time constant of 33(17) s is found upon exposure to 1% H2/air gas at 300 K. The influence of humidity on the hydrogen sensing performance is studied in this work. Based on the improved properties, the studied device could serve as a candidate for high-performance hydrogen sensing applications.

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