Hydrogen-sensing characteristics of a Pd/GaN schottky diode with a simple surface roughness approach

Tai You Chen, Huey Ing Chen, Chien Chang Huang, Chi Shiang Hsu, Po Shun Chiu, Po Cheng Chou, Rong Chau Liu, Wen Chau Liu

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Hydrogen-sensing characteristics of a Pd/GaN Schottky diode with a simple surface roughness approach are studied and demonstrated. A high sensing response Sr of 2.05 × 105 and a large Schottky barrier height variation ratio (ΔφBair) of 36.3% upon exposure to a 1% H2/air gas at 303 K are found. They could be attributed to the presence of more adsorption sites caused by the employed surface plasma treatment. The increase in series resistance due to the decrease in sensing response under the applied voltage range from 0.5 to 1 V is found. Based on the kinetic analysis and transient-state behavior measurement, at 523 K, the studied device shows a faster adsorption time of 2.9 s and a higher initial rate of 968 μA/s}. Consequently, the studied structure provides a promise for high-performance GaN-based Schottky-diode-type hydrogen sensor applications.

原文English
文章編號6032084
頁(從 - 到)4079-4086
頁數8
期刊IEEE Transactions on Electron Devices
58
發行號11
DOIs
出版狀態Published - 2011 十一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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