Hydrogen sensing characteristics of a Pd/Nickel oxide/GaN-based Schottky diode

I. Ping Liu, Ching Hong Chang, Yen Ming Huang, Kun Wei Lin

研究成果: Article

2 引文 (Scopus)

摘要

Hydrogen sensing characteristics of a novel metal-oxide-semiconductor (MOS) Schottky diode are thoroughly investigated. The MOS structure consists of a gallium nitride (GaN)-based semiconductor system, a nickel oxide (NiO) layer, and palladium (Pd) catalytic materials. A well-prepared Pd/NiO/GaN-based diode shows several advantages in relation to hydrogen sensing, including a simple structure, high sensing speed, wide flexibility for operation under both forward and reverse applied voltages, and a good sensing response of 8.1 × 10 3 under an applied forward voltage of 0.25 V, at 300 K in a 1% H 2 /air ambience. Furthermore, under an applied reverse voltage of −2 V and at a high temperature of 573 K, this MOS diode shows a response as high as 1.8 × 10 4 towards 1% H 2 /air mixture gas. The Schottky diode sensor with a novel Pd/NiO/GaN structure demonstrated in this study is a promising candidate for high-performance hydrogen sensing applications.

原文English
頁(從 - 到)5748-5754
頁數7
期刊International Journal of Hydrogen Energy
44
發行號12
DOIs
出版狀態Published - 2019 三月 1

指紋

Gallium nitride
Nickel oxide
nickel oxides
gallium nitrides
Schottky diodes
Palladium
palladium
Diodes
Hydrogen
metal oxide semiconductors
Electric potential
hydrogen
Metals
semiconductor diodes
Semiconductor diodes
Air
electric potential
Gas mixtures
ambience
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology

引用此文

Liu, I. Ping ; Chang, Ching Hong ; Huang, Yen Ming ; Lin, Kun Wei. / Hydrogen sensing characteristics of a Pd/Nickel oxide/GaN-based Schottky diode. 於: International Journal of Hydrogen Energy. 2019 ; 卷 44, 編號 12. 頁 5748-5754.
@article{74430e83e2a948238080fb69e1f831c1,
title = "Hydrogen sensing characteristics of a Pd/Nickel oxide/GaN-based Schottky diode",
abstract = "Hydrogen sensing characteristics of a novel metal-oxide-semiconductor (MOS) Schottky diode are thoroughly investigated. The MOS structure consists of a gallium nitride (GaN)-based semiconductor system, a nickel oxide (NiO) layer, and palladium (Pd) catalytic materials. A well-prepared Pd/NiO/GaN-based diode shows several advantages in relation to hydrogen sensing, including a simple structure, high sensing speed, wide flexibility for operation under both forward and reverse applied voltages, and a good sensing response of 8.1 × 10 3 under an applied forward voltage of 0.25 V, at 300 K in a 1{\%} H 2 /air ambience. Furthermore, under an applied reverse voltage of −2 V and at a high temperature of 573 K, this MOS diode shows a response as high as 1.8 × 10 4 towards 1{\%} H 2 /air mixture gas. The Schottky diode sensor with a novel Pd/NiO/GaN structure demonstrated in this study is a promising candidate for high-performance hydrogen sensing applications.",
author = "Liu, {I. Ping} and Chang, {Ching Hong} and Huang, {Yen Ming} and Lin, {Kun Wei}",
year = "2019",
month = "3",
day = "1",
doi = "10.1016/j.ijhydene.2019.01.056",
language = "English",
volume = "44",
pages = "5748--5754",
journal = "International Journal of Hydrogen Energy",
issn = "0360-3199",
publisher = "Elsevier Limited",
number = "12",

}

Hydrogen sensing characteristics of a Pd/Nickel oxide/GaN-based Schottky diode. / Liu, I. Ping; Chang, Ching Hong; Huang, Yen Ming; Lin, Kun Wei.

於: International Journal of Hydrogen Energy, 卷 44, 編號 12, 01.03.2019, p. 5748-5754.

研究成果: Article

TY - JOUR

T1 - Hydrogen sensing characteristics of a Pd/Nickel oxide/GaN-based Schottky diode

AU - Liu, I. Ping

AU - Chang, Ching Hong

AU - Huang, Yen Ming

AU - Lin, Kun Wei

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Hydrogen sensing characteristics of a novel metal-oxide-semiconductor (MOS) Schottky diode are thoroughly investigated. The MOS structure consists of a gallium nitride (GaN)-based semiconductor system, a nickel oxide (NiO) layer, and palladium (Pd) catalytic materials. A well-prepared Pd/NiO/GaN-based diode shows several advantages in relation to hydrogen sensing, including a simple structure, high sensing speed, wide flexibility for operation under both forward and reverse applied voltages, and a good sensing response of 8.1 × 10 3 under an applied forward voltage of 0.25 V, at 300 K in a 1% H 2 /air ambience. Furthermore, under an applied reverse voltage of −2 V and at a high temperature of 573 K, this MOS diode shows a response as high as 1.8 × 10 4 towards 1% H 2 /air mixture gas. The Schottky diode sensor with a novel Pd/NiO/GaN structure demonstrated in this study is a promising candidate for high-performance hydrogen sensing applications.

AB - Hydrogen sensing characteristics of a novel metal-oxide-semiconductor (MOS) Schottky diode are thoroughly investigated. The MOS structure consists of a gallium nitride (GaN)-based semiconductor system, a nickel oxide (NiO) layer, and palladium (Pd) catalytic materials. A well-prepared Pd/NiO/GaN-based diode shows several advantages in relation to hydrogen sensing, including a simple structure, high sensing speed, wide flexibility for operation under both forward and reverse applied voltages, and a good sensing response of 8.1 × 10 3 under an applied forward voltage of 0.25 V, at 300 K in a 1% H 2 /air ambience. Furthermore, under an applied reverse voltage of −2 V and at a high temperature of 573 K, this MOS diode shows a response as high as 1.8 × 10 4 towards 1% H 2 /air mixture gas. The Schottky diode sensor with a novel Pd/NiO/GaN structure demonstrated in this study is a promising candidate for high-performance hydrogen sensing applications.

UR - http://www.scopus.com/inward/record.url?scp=85060875356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060875356&partnerID=8YFLogxK

U2 - 10.1016/j.ijhydene.2019.01.056

DO - 10.1016/j.ijhydene.2019.01.056

M3 - Article

AN - SCOPUS:85060875356

VL - 44

SP - 5748

EP - 5754

JO - International Journal of Hydrogen Energy

JF - International Journal of Hydrogen Energy

SN - 0360-3199

IS - 12

ER -