Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches

Chun Chia Chen, Huey Ing Chen, I. Ping Liu, Po Cheng Chou, Jian Kai Liou, Chien Chang Huang, Wen Chau Liu

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET), based on sensitization, activation, and electroless plating (EP) deposition approaches, is fabricated and studied. Utilizing the sensitization and activation processes, a dense and uniform Pd seed layer could be implanted on the AlGaN layer prior to Pt-gate formation. In addition, a dense Pt-gate morphology and excellent Schottky contact properties are obtained. This causes significant improvement in DC performance and thermal stabilities as compared with a thermal evaporation (TE)-based one. For a used gate dimension of 1 × 100 μm2, the lower gate leakage current of 0.9 (8.4) nA, higher maximum extrinsic transconductance of 90.1 (52.1) mS/mm, and maximum drain saturation current of 325 (178) mA/mm are found for an EP Pt-gate HFET at 300 (600) K. Moreover, as a hydrogen gas sensor, the maximum drain current response (13.7%), high on/off ratio (8 × 105), and fast response (28 s) and recovery (36 s) time constants in 10,000, 50, and 5 ppm H2/air gases are obtained at 400 K, respectively. Therefore, the studied EP Pt-gate HFET shows promise for a high-performance electronic device and hydrogen gas sensing applications.

原文English
頁(從 - 到)127-136
頁數10
期刊Sensors and Actuators, B: Chemical
212
DOIs
出版狀態Published - 2015 六月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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