Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches

Chun Chia Chen, Huey-Ing Chen, I-Ping Liu, Po Cheng Chou, Jian Kai Liou, Chien Chang Huang, Wen-Chau Liu

研究成果: Article

2 引文 (Scopus)

摘要

A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET), based on sensitization, activation, and electroless plating (EP) deposition approaches, is fabricated and studied. Utilizing the sensitization and activation processes, a dense and uniform Pd seed layer could be implanted on the AlGaN layer prior to Pt-gate formation. In addition, a dense Pt-gate morphology and excellent Schottky contact properties are obtained. This causes significant improvement in DC performance and thermal stabilities as compared with a thermal evaporation (TE)-based one. For a used gate dimension of 1 × 100 μm2, the lower gate leakage current of 0.9 (8.4) nA, higher maximum extrinsic transconductance of 90.1 (52.1) mS/mm, and maximum drain saturation current of 325 (178) mA/mm are found for an EP Pt-gate HFET at 300 (600) K. Moreover, as a hydrogen gas sensor, the maximum drain current response (13.7%), high on/off ratio (8 × 105), and fast response (28 s) and recovery (36 s) time constants in 10,000, 50, and 5 ppm H2/air gases are obtained at 400 K, respectively. Therefore, the studied EP Pt-gate HFET shows promise for a high-performance electronic device and hydrogen gas sensing applications.

原文English
頁(從 - 到)127-136
頁數10
期刊Sensors and Actuators, B: Chemical
212
DOIs
出版狀態Published - 2015 一月 1

指紋

Electroless plating
High electron mobility transistors
plating
Hydrogen
field effect transistors
Chemical activation
activation
hydrogen
Gases
Thermal evaporation
Drain current
Transconductance
Chemical sensors
Leakage currents
Seed
Thermodynamic stability
gases
Recovery
transconductance
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

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title = "Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches",
abstract = "A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET), based on sensitization, activation, and electroless plating (EP) deposition approaches, is fabricated and studied. Utilizing the sensitization and activation processes, a dense and uniform Pd seed layer could be implanted on the AlGaN layer prior to Pt-gate formation. In addition, a dense Pt-gate morphology and excellent Schottky contact properties are obtained. This causes significant improvement in DC performance and thermal stabilities as compared with a thermal evaporation (TE)-based one. For a used gate dimension of 1 × 100 μm2, the lower gate leakage current of 0.9 (8.4) nA, higher maximum extrinsic transconductance of 90.1 (52.1) mS/mm, and maximum drain saturation current of 325 (178) mA/mm are found for an EP Pt-gate HFET at 300 (600) K. Moreover, as a hydrogen gas sensor, the maximum drain current response (13.7{\%}), high on/off ratio (8 × 105), and fast response (28 s) and recovery (36 s) time constants in 10,000, 50, and 5 ppm H2/air gases are obtained at 400 K, respectively. Therefore, the studied EP Pt-gate HFET shows promise for a high-performance electronic device and hydrogen gas sensing applications.",
author = "Chen, {Chun Chia} and Huey-Ing Chen and I-Ping Liu and Chou, {Po Cheng} and Liou, {Jian Kai} and Huang, {Chien Chang} and Wen-Chau Liu",
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T1 - Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches

AU - Chen, Chun Chia

AU - Chen, Huey-Ing

AU - Liu, I-Ping

AU - Chou, Po Cheng

AU - Liou, Jian Kai

AU - Huang, Chien Chang

AU - Liu, Wen-Chau

PY - 2015/1/1

Y1 - 2015/1/1

N2 - A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET), based on sensitization, activation, and electroless plating (EP) deposition approaches, is fabricated and studied. Utilizing the sensitization and activation processes, a dense and uniform Pd seed layer could be implanted on the AlGaN layer prior to Pt-gate formation. In addition, a dense Pt-gate morphology and excellent Schottky contact properties are obtained. This causes significant improvement in DC performance and thermal stabilities as compared with a thermal evaporation (TE)-based one. For a used gate dimension of 1 × 100 μm2, the lower gate leakage current of 0.9 (8.4) nA, higher maximum extrinsic transconductance of 90.1 (52.1) mS/mm, and maximum drain saturation current of 325 (178) mA/mm are found for an EP Pt-gate HFET at 300 (600) K. Moreover, as a hydrogen gas sensor, the maximum drain current response (13.7%), high on/off ratio (8 × 105), and fast response (28 s) and recovery (36 s) time constants in 10,000, 50, and 5 ppm H2/air gases are obtained at 400 K, respectively. Therefore, the studied EP Pt-gate HFET shows promise for a high-performance electronic device and hydrogen gas sensing applications.

AB - A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET), based on sensitization, activation, and electroless plating (EP) deposition approaches, is fabricated and studied. Utilizing the sensitization and activation processes, a dense and uniform Pd seed layer could be implanted on the AlGaN layer prior to Pt-gate formation. In addition, a dense Pt-gate morphology and excellent Schottky contact properties are obtained. This causes significant improvement in DC performance and thermal stabilities as compared with a thermal evaporation (TE)-based one. For a used gate dimension of 1 × 100 μm2, the lower gate leakage current of 0.9 (8.4) nA, higher maximum extrinsic transconductance of 90.1 (52.1) mS/mm, and maximum drain saturation current of 325 (178) mA/mm are found for an EP Pt-gate HFET at 300 (600) K. Moreover, as a hydrogen gas sensor, the maximum drain current response (13.7%), high on/off ratio (8 × 105), and fast response (28 s) and recovery (36 s) time constants in 10,000, 50, and 5 ppm H2/air gases are obtained at 400 K, respectively. Therefore, the studied EP Pt-gate HFET shows promise for a high-performance electronic device and hydrogen gas sensing applications.

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