Hydrogen sensing characteristics of Pd-and Pt-Al0.3Ga 0.7As metal-semiconductor (MS) Schottky diodes

Chin Chuan Cheng; Yan Ying Tsai; Kun Wei Lin; Huey Ing Chen; Wei Hsi Hsu; Huns Ming Chuang; Chun Yuan Chen; Wen Chau Liu

doi:10.1088/0268-1242/19/6/022

Hydrogen sensing characteristics of Pd-and Pt-Al_0.3Ga _0.7As metal-semiconductor (MS) Schottky diodes

Chin Chuan Cheng, Yan Ying Tsai, Kun Wei Lin, Huey Ing Chen, Wei Hsi Hsu, Huns Ming Chuang, Chun Yuan Chen, Wen Chau Liu

研究成果: Article › 同行評審

31 引文斯高帕斯（Scopus）

摘要

Pd- and Pt-Al_0.3Ga_0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al _0.3Ga_0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole^-1, respectively.

原文	English
頁（從 - 到）	778-782
頁數	5
期刊	Semiconductor Science and Technology
卷	19
發行號	6
DOIs	https://doi.org/10.1088/0268-1242/19/6/022
出版狀態	Published - 2004 6月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1088/0268-1242/19/6/022

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title = "Hydrogen sensing characteristics of Pd-and Pt-Al0.3Ga 0.7As metal-semiconductor (MS) Schottky diodes",

abstract = "Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al 0.3Ga0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole-1, respectively.",

author = "Cheng, {Chin Chuan} and Tsai, {Yan Ying} and Lin, {Kun Wei} and Chen, {Huey Ing} and Hsu, {Wei Hsi} and Chuang, {Huns Ming} and Chen, {Chun Yuan} and Liu, {Wen Chau}",

year = "2004",

month = jun,

doi = "10.1088/0268-1242/19/6/022",

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pages = "778--782",

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TY - JOUR

T1 - Hydrogen sensing characteristics of Pd-and Pt-Al0.3Ga 0.7As metal-semiconductor (MS) Schottky diodes

AU - Cheng, Chin Chuan

AU - Tsai, Yan Ying

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Hsu, Wei Hsi

AU - Chuang, Huns Ming

AU - Chen, Chun Yuan

AU - Liu, Wen Chau

PY - 2004/6

Y1 - 2004/6

N2 - Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al 0.3Ga0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole-1, respectively.

AB - Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al 0.3Ga0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole-1, respectively.

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DO - 10.1088/0268-1242/19/6/022

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SN - 0268-1242

VL - 19

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

Hydrogen sensing characteristics of Pd-and Pt-Al0.3Ga 0.7As metal-semiconductor (MS) Schottky diodes

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Hydrogen sensing characteristics of Pd-and Pt-Al_0.3Ga _0.7As metal-semiconductor (MS) Schottky diodes