Hydrogen sensing characteristics of Pd-and Pt-Al0.3Ga 0.7As metal-semiconductor (MS) Schottky diodes

Chin Chuan Cheng, Yan Ying Tsai, Kun Wei Lin, Huey-Ing Chen, Wei Hsi Hsu, Huns Ming Chuang, Chun Yuan Chen, Wen-Chau Liu

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes are fabricated and studied. The hydrogen-sensing characteristics including Schottky barrier height modulations and hydrogen detection sensitivity and transient responses are investigated and presented. Due to the formation of hydroxyl at higher temperature, different transient responses are found for the studied Pt- and Pd-MS Schottky diodes. According to the van't Hoff equation, the initial heat of adsorption for the Pd- and Pt-Al 0.3Ga0.7As MS interfaces is calculated as -5.21 and -7.56 kJ mole-1, respectively.

原文English
頁(從 - 到)778-782
頁數5
期刊Semiconductor Science and Technology
19
發行號6
DOIs
出版狀態Published - 2004 6月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 材料化學
  • 電氣與電子工程

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