Hydrogen sensing performance of a GaN-based Schottky diode with an H2O2 treatment and electroless plating approach

I. Ping Liu, Ching Hong Chang, Hsin Hau Lu, Kun Wei Lin

研究成果: Article

摘要

A new electroless plating (EP)-Pd/GaOx/GaN Schottky diode-type hydrogen sensor is fabricated and comprehensively studied herein. The GaOx dielectric is formed as a result of a proper H2O2 treatment on the GaN surface. In addition, a 20-period sensitization/activation process and an appropriate EP approach of the Pd catalytic layer are employed to facilitate a high-performance metal-semiconductor (M-S)Schottky contact. Experimentally, an extremely high hydrogen sensing response of 5.5 × 106 (under 1% H2/air gas)and a relatively low detection limit of 5 ppm H2/air are obtained at 300 K. The corresponding response and recovery times are 22 s and 21 s at 300 K, respectively. A new data transmission algorithm based on the Kalman algorithm is also proposed in this work. According to the simulation results, the data transmission volume can be reduced by 90%. The average recovery error rate is less than 0.38%. Furthermore, our developed reduced redundancy method can pre-warn the user of sensor failure. Based on the advantages mentioned above, therefore, the studied device is promising for high-performance hydrogen sensing and Internet of Things (IoT)applications.

原文English
文章編號126599
期刊Sensors and Actuators, B: Chemical
296
DOIs
出版狀態Published - 2019 十月 1

指紋

Electroless plating
Schottky diodes
plating
Hydrogen
Diodes
data transmission
Data communication systems
hydrogen
recovery
sensors
air
Sensors
redundancy
Air
Redundancy
electric contacts
Gases
Metals
Chemical activation
activation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

@article{d5c3addf5124463fabb678a46bb910c2,
title = "Hydrogen sensing performance of a GaN-based Schottky diode with an H2O2 treatment and electroless plating approach",
abstract = "A new electroless plating (EP)-Pd/GaOx/GaN Schottky diode-type hydrogen sensor is fabricated and comprehensively studied herein. The GaOx dielectric is formed as a result of a proper H2O2 treatment on the GaN surface. In addition, a 20-period sensitization/activation process and an appropriate EP approach of the Pd catalytic layer are employed to facilitate a high-performance metal-semiconductor (M-S)Schottky contact. Experimentally, an extremely high hydrogen sensing response of 5.5 × 106 (under 1{\%} H2/air gas)and a relatively low detection limit of 5 ppm H2/air are obtained at 300 K. The corresponding response and recovery times are 22 s and 21 s at 300 K, respectively. A new data transmission algorithm based on the Kalman algorithm is also proposed in this work. According to the simulation results, the data transmission volume can be reduced by 90{\%}. The average recovery error rate is less than 0.38{\%}. Furthermore, our developed reduced redundancy method can pre-warn the user of sensor failure. Based on the advantages mentioned above, therefore, the studied device is promising for high-performance hydrogen sensing and Internet of Things (IoT)applications.",
author = "Liu, {I. Ping} and Chang, {Ching Hong} and Lu, {Hsin Hau} and Lin, {Kun Wei}",
year = "2019",
month = "10",
day = "1",
doi = "10.1016/j.snb.2019.05.076",
language = "English",
volume = "296",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",

}

Hydrogen sensing performance of a GaN-based Schottky diode with an H2O2 treatment and electroless plating approach. / Liu, I. Ping; Chang, Ching Hong; Lu, Hsin Hau; Lin, Kun Wei.

於: Sensors and Actuators, B: Chemical, 卷 296, 126599, 01.10.2019.

研究成果: Article

TY - JOUR

T1 - Hydrogen sensing performance of a GaN-based Schottky diode with an H2O2 treatment and electroless plating approach

AU - Liu, I. Ping

AU - Chang, Ching Hong

AU - Lu, Hsin Hau

AU - Lin, Kun Wei

PY - 2019/10/1

Y1 - 2019/10/1

N2 - A new electroless plating (EP)-Pd/GaOx/GaN Schottky diode-type hydrogen sensor is fabricated and comprehensively studied herein. The GaOx dielectric is formed as a result of a proper H2O2 treatment on the GaN surface. In addition, a 20-period sensitization/activation process and an appropriate EP approach of the Pd catalytic layer are employed to facilitate a high-performance metal-semiconductor (M-S)Schottky contact. Experimentally, an extremely high hydrogen sensing response of 5.5 × 106 (under 1% H2/air gas)and a relatively low detection limit of 5 ppm H2/air are obtained at 300 K. The corresponding response and recovery times are 22 s and 21 s at 300 K, respectively. A new data transmission algorithm based on the Kalman algorithm is also proposed in this work. According to the simulation results, the data transmission volume can be reduced by 90%. The average recovery error rate is less than 0.38%. Furthermore, our developed reduced redundancy method can pre-warn the user of sensor failure. Based on the advantages mentioned above, therefore, the studied device is promising for high-performance hydrogen sensing and Internet of Things (IoT)applications.

AB - A new electroless plating (EP)-Pd/GaOx/GaN Schottky diode-type hydrogen sensor is fabricated and comprehensively studied herein. The GaOx dielectric is formed as a result of a proper H2O2 treatment on the GaN surface. In addition, a 20-period sensitization/activation process and an appropriate EP approach of the Pd catalytic layer are employed to facilitate a high-performance metal-semiconductor (M-S)Schottky contact. Experimentally, an extremely high hydrogen sensing response of 5.5 × 106 (under 1% H2/air gas)and a relatively low detection limit of 5 ppm H2/air are obtained at 300 K. The corresponding response and recovery times are 22 s and 21 s at 300 K, respectively. A new data transmission algorithm based on the Kalman algorithm is also proposed in this work. According to the simulation results, the data transmission volume can be reduced by 90%. The average recovery error rate is less than 0.38%. Furthermore, our developed reduced redundancy method can pre-warn the user of sensor failure. Based on the advantages mentioned above, therefore, the studied device is promising for high-performance hydrogen sensing and Internet of Things (IoT)applications.

UR - http://www.scopus.com/inward/record.url?scp=85066442009&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066442009&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2019.05.076

DO - 10.1016/j.snb.2019.05.076

M3 - Article

AN - SCOPUS:85066442009

VL - 296

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

M1 - 126599

ER -