Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode

Huey Ing Chen, Ching Hong Chang, Hsin Hau Lu, I. Ping Liu, Wei Cheng Chen, Bu Yuan Ke, Wen Chau Liu

研究成果: Article

3 引文 (Scopus)

摘要

A hafnium oxide (HfO2) layer, prepared using a sputtering approach, is employed to produce a Pd/HfO2/GaN-based metal-oxide-semiconductor (MOS)-type Schottky diode. The hydrogen sensing characteristics of this MOS diode are comprehensively studied. Experimentally, upon exposure to 1% H2/air gas at 300 K, the studied device shows a higher sensing response of 4.9 × 105 (139) under an applied forward- (reverse-) voltage of 0.5 V(–2 V). A lower detection limit of 5 ppm H2/air is obtained. Reversible, high-speed sensing properties are found at higher operating temperatures. The response (recovery) time constant is decreased from 39 s (42 s) to 5.3 s (2.5 s) when the temperature is increased from 300 to 383 K. The humidity effect and hydrogen adsorption mechanism at the Pd/HfO2 interface are also studied in this work. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.

原文English
頁(從 - 到)852-859
頁數8
期刊Sensors and Actuators, B: Chemical
262
DOIs
出版狀態Published - 2018 六月 1

指紋

semiconductor diodes
Schottky diodes
metal oxide semiconductors
Hydrogen
Diodes
Metals
Semiconductor diodes
hydrogen
Hafnium oxides
Adsorption
high speed
hafnium oxides
Air
adsorption
air
Temperature
Sputtering
operating temperature
Atmospheric humidity
time constant

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

@article{8153375f09414538b22d678fc364f5a7,
title = "Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode",
abstract = "A hafnium oxide (HfO2) layer, prepared using a sputtering approach, is employed to produce a Pd/HfO2/GaN-based metal-oxide-semiconductor (MOS)-type Schottky diode. The hydrogen sensing characteristics of this MOS diode are comprehensively studied. Experimentally, upon exposure to 1{\%} H2/air gas at 300 K, the studied device shows a higher sensing response of 4.9 × 105 (139) under an applied forward- (reverse-) voltage of 0.5 V(–2 V). A lower detection limit of 5 ppm H2/air is obtained. Reversible, high-speed sensing properties are found at higher operating temperatures. The response (recovery) time constant is decreased from 39 s (42 s) to 5.3 s (2.5 s) when the temperature is increased from 300 to 383 K. The humidity effect and hydrogen adsorption mechanism at the Pd/HfO2 interface are also studied in this work. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.",
author = "Chen, {Huey Ing} and Chang, {Ching Hong} and Lu, {Hsin Hau} and Liu, {I. Ping} and Chen, {Wei Cheng} and Ke, {Bu Yuan} and Liu, {Wen Chau}",
year = "2018",
month = "6",
day = "1",
doi = "10.1016/j.snb.2018.02.077",
language = "English",
volume = "262",
pages = "852--859",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",

}

Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode. / Chen, Huey Ing; Chang, Ching Hong; Lu, Hsin Hau; Liu, I. Ping; Chen, Wei Cheng; Ke, Bu Yuan; Liu, Wen Chau.

於: Sensors and Actuators, B: Chemical, 卷 262, 01.06.2018, p. 852-859.

研究成果: Article

TY - JOUR

T1 - Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode

AU - Chen, Huey Ing

AU - Chang, Ching Hong

AU - Lu, Hsin Hau

AU - Liu, I. Ping

AU - Chen, Wei Cheng

AU - Ke, Bu Yuan

AU - Liu, Wen Chau

PY - 2018/6/1

Y1 - 2018/6/1

N2 - A hafnium oxide (HfO2) layer, prepared using a sputtering approach, is employed to produce a Pd/HfO2/GaN-based metal-oxide-semiconductor (MOS)-type Schottky diode. The hydrogen sensing characteristics of this MOS diode are comprehensively studied. Experimentally, upon exposure to 1% H2/air gas at 300 K, the studied device shows a higher sensing response of 4.9 × 105 (139) under an applied forward- (reverse-) voltage of 0.5 V(–2 V). A lower detection limit of 5 ppm H2/air is obtained. Reversible, high-speed sensing properties are found at higher operating temperatures. The response (recovery) time constant is decreased from 39 s (42 s) to 5.3 s (2.5 s) when the temperature is increased from 300 to 383 K. The humidity effect and hydrogen adsorption mechanism at the Pd/HfO2 interface are also studied in this work. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.

AB - A hafnium oxide (HfO2) layer, prepared using a sputtering approach, is employed to produce a Pd/HfO2/GaN-based metal-oxide-semiconductor (MOS)-type Schottky diode. The hydrogen sensing characteristics of this MOS diode are comprehensively studied. Experimentally, upon exposure to 1% H2/air gas at 300 K, the studied device shows a higher sensing response of 4.9 × 105 (139) under an applied forward- (reverse-) voltage of 0.5 V(–2 V). A lower detection limit of 5 ppm H2/air is obtained. Reversible, high-speed sensing properties are found at higher operating temperatures. The response (recovery) time constant is decreased from 39 s (42 s) to 5.3 s (2.5 s) when the temperature is increased from 300 to 383 K. The humidity effect and hydrogen adsorption mechanism at the Pd/HfO2 interface are also studied in this work. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.

UR - http://www.scopus.com/inward/record.url?scp=85042215660&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042215660&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2018.02.077

DO - 10.1016/j.snb.2018.02.077

M3 - Article

AN - SCOPUS:85042215660

VL - 262

SP - 852

EP - 859

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

ER -