Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode

Ching Hong Chang, Kun Wei Lin, Hsin Hau Lu, Rong Chau Liu, Wen Chau Liu

研究成果: Article

6 引文 (Scopus)

摘要

An interesting hydrogen sensor based on a Pd/HfO2/GaOx/GaN metal-oxide-semiconductor (MOS) structure is fabricated and demonstrated. The HfO2 and GaOx layers are prepared using a sputtering approach and hydrogen peroxide (H2O2) treatment. The hydrogen sensing characteristics of the studied device are comprehensively studied. Experimentally, good hydrogen sensing characteristics, including a high sensing response of 8.47 × 105, a low detection level of 5 ppm H2/air, and reversible, short response and recovery times upon exposure to different hydrogen concentrations and temperatures are obtained. The influence of humidity on hydrogen sensing performance is also studied. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaOx/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.

原文English
頁(從 - 到)19816-19824
頁數9
期刊International Journal of Hydrogen Energy
43
發行號42
DOIs
出版狀態Published - 2018 十月 18

指紋

Schottky diodes
metal oxide semiconductors
Diodes
Hydrogen
hydrogen
Metals
Semiconductor diodes
semiconductor diodes
Oxide semiconductors
peroxides
hydrogen peroxide
Hydrogen peroxide
Sputtering
humidity
Atmospheric humidity
sputtering
recovery
chips
high speed
Adsorption

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology

引用此文

Chang, Ching Hong ; Lin, Kun Wei ; Lu, Hsin Hau ; Liu, Rong Chau ; Liu, Wen Chau. / Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode. 於: International Journal of Hydrogen Energy. 2018 ; 卷 43, 編號 42. 頁 19816-19824.
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abstract = "An interesting hydrogen sensor based on a Pd/HfO2/GaOx/GaN metal-oxide-semiconductor (MOS) structure is fabricated and demonstrated. The HfO2 and GaOx layers are prepared using a sputtering approach and hydrogen peroxide (H2O2) treatment. The hydrogen sensing characteristics of the studied device are comprehensively studied. Experimentally, good hydrogen sensing characteristics, including a high sensing response of 8.47 × 105, a low detection level of 5 ppm H2/air, and reversible, short response and recovery times upon exposure to different hydrogen concentrations and temperatures are obtained. The influence of humidity on hydrogen sensing performance is also studied. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaOx/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.",
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Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode. / Chang, Ching Hong; Lin, Kun Wei; Lu, Hsin Hau; Liu, Rong Chau; Liu, Wen Chau.

於: International Journal of Hydrogen Energy, 卷 43, 編號 42, 18.10.2018, p. 19816-19824.

研究成果: Article

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AU - Chang, Ching Hong

AU - Lin, Kun Wei

AU - Lu, Hsin Hau

AU - Liu, Rong Chau

AU - Liu, Wen Chau

PY - 2018/10/18

Y1 - 2018/10/18

N2 - An interesting hydrogen sensor based on a Pd/HfO2/GaOx/GaN metal-oxide-semiconductor (MOS) structure is fabricated and demonstrated. The HfO2 and GaOx layers are prepared using a sputtering approach and hydrogen peroxide (H2O2) treatment. The hydrogen sensing characteristics of the studied device are comprehensively studied. Experimentally, good hydrogen sensing characteristics, including a high sensing response of 8.47 × 105, a low detection level of 5 ppm H2/air, and reversible, short response and recovery times upon exposure to different hydrogen concentrations and temperatures are obtained. The influence of humidity on hydrogen sensing performance is also studied. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaOx/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.

AB - An interesting hydrogen sensor based on a Pd/HfO2/GaOx/GaN metal-oxide-semiconductor (MOS) structure is fabricated and demonstrated. The HfO2 and GaOx layers are prepared using a sputtering approach and hydrogen peroxide (H2O2) treatment. The hydrogen sensing characteristics of the studied device are comprehensively studied. Experimentally, good hydrogen sensing characteristics, including a high sensing response of 8.47 × 105, a low detection level of 5 ppm H2/air, and reversible, short response and recovery times upon exposure to different hydrogen concentrations and temperatures are obtained. The influence of humidity on hydrogen sensing performance is also studied. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaOx/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.

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