Hydrogen sensing performance of Pt-oxide-GaN Schottky diode

Y. Y. Tsai, K. W. Lin, Huey-Ing Chen, C. W. Hung, T. P. Chen, Wen-Chau Liu

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4mV at a forward current of 1mA is obtained under 5040ppm H2/air gas. Also, a large current variation of 0.89mA in magnitude between air and 5040ppm H2/air gas is observed under a forward voltage of 0.2V. Under an inert environment (N 2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.

原文English
頁(從 - 到)1192-1194
頁數3
期刊Electronics Letters
43
發行號22
DOIs
出版狀態Published - 2007 十月 30

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Tsai, Y. Y., Lin, K. W., Chen, H-I., Hung, C. W., Chen, T. P., & Liu, W-C. (2007). Hydrogen sensing performance of Pt-oxide-GaN Schottky diode. Electronics Letters, 43(22), 1192-1194. https://doi.org/10.1049/el:20072041