Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode

Yan Ying Tsai, Kun Wei Lin, Huey Ing Chen, I. Ping Liu, Ching Wen Hung, Tzu Pin Chen, Tsung Han Tsai, Li Yang Chen, Kuei Yi Chu, Wen Chau Liu

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The interesting hydrogen sensing properties of a Pt-oxide-GaN metal-oxide-semiconductor-type Schottky diode are comprehensively studied and demonstrated. In the hydrogen-containing environment, the shift in current-voltage curves and decrease in turn-on voltage are found to be caused by the lowering of Schottky barrier height. Also, the corresponding series resistance is decreased from 191.8 (in air) to 155.3 Ω (for a 9970 ppm H2/air gas) at 30°C. As the carrier gas is replaced by a nitrogen gas, a significant variation of 0.32 V and 19.56 Ω in the turn-on voltage Von and series resistance Rs values, respectively, is obtained at 30°C, even at an extremely low hydrogen concentration of 4.3 ppm H2/N2. Since the oxygen atoms will be dissolved on the Pt metal surface and react with hydrogen atoms by the formation of hydroxyl and water, the number of adsorbed hydrogen atoms on the Pt surface is reduced. Moreover, the shorter response time constant and the larger initial rate of current density variation are found even at room temperature.

原文English
文章編號024515
期刊Journal of Applied Physics
104
發行號2
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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