TY - JOUR
T1 - Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor
AU - Liu, Wen Chau
AU - Pan, Hsi Jen
AU - Chen, Huey Ing
AU - Lin, Kun Wei
AU - Cheng, Shiou Ying
AU - Yu, Kuo Hui
N1 - Funding Information:
Manuscript received November 27, 2000; revised March 13, 2001. This work was supported in part by the National Science Council, Taiwan, R.O.C., under Contract NSC 89-2215-E-006-029. The review of this paper was arranged by Editor K. Najafi. W.-C. Liu, H.-J. Pan, and K.-H. Yu are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 70101, R.O.C. (e-mail: [email protected]). H.-I. Chen is with the Department of Chemical Engineer, National Cheng-Kung University, Tainan, Taiwan 70101, R.O.C. K.-W. Lin is with the Department of Electrical Engineering, Chien Kuo Institute of Technology, Changhua, Taiwan, R.O.C. S.-Y. Cheng is with the Department of Electrical Engineering, Oriental Institute of Technology, Taipei Hsien, Taiwan, R.O.C. Publisher Item Identifier S 0018-9383(01)06910-6.
PY - 2001/9
Y1 - 2001/9
N2 - Steady-state and transient hydrogen-sensing characteristics of a novel Pd/InP metal-oxide-semiconductor (MOS) Schottky diode under atmospheric conditions are presented and studied. In presence of oxide layer, the significant increase of barrier height improves the hydrogen sensitivity even at lower operating temperatures. Even at a very low hydrogen concentration environment, e.g., 15 ppm H 2 in air, a significant response is obtained. Two effects, i.e., the removal of Fermi-level pinning caused by the donor level in the oxide and the reduction of Pd metal work function dominate the hydrogen sensing mechanism. Furthermore, the reaction kinetics incorporating the water formation upon hydrogen adsorption is investigated. The initial heat of adsorption for the Pd/oxide interface is estimated to be 0.42 eV/hydrogen atom. The coverage dependent heat of adsorption plays an important role in hydrogen response under steady-state conditions. In accordance with the Temkin isotherm behavior, the theoretical prediction of interface coverage agrees well with the experimental results over more than three decades of hydrogen partial pressure.
AB - Steady-state and transient hydrogen-sensing characteristics of a novel Pd/InP metal-oxide-semiconductor (MOS) Schottky diode under atmospheric conditions are presented and studied. In presence of oxide layer, the significant increase of barrier height improves the hydrogen sensitivity even at lower operating temperatures. Even at a very low hydrogen concentration environment, e.g., 15 ppm H 2 in air, a significant response is obtained. Two effects, i.e., the removal of Fermi-level pinning caused by the donor level in the oxide and the reduction of Pd metal work function dominate the hydrogen sensing mechanism. Furthermore, the reaction kinetics incorporating the water formation upon hydrogen adsorption is investigated. The initial heat of adsorption for the Pd/oxide interface is estimated to be 0.42 eV/hydrogen atom. The coverage dependent heat of adsorption plays an important role in hydrogen response under steady-state conditions. In accordance with the Temkin isotherm behavior, the theoretical prediction of interface coverage agrees well with the experimental results over more than three decades of hydrogen partial pressure.
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U2 - 10.1109/16.944180
DO - 10.1109/16.944180
M3 - Article
AN - SCOPUS:0035445385
SN - 0018-9383
VL - 48
SP - 1938
EP - 1944
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 9
ER -