ICP etching of sapphire substrates

Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. H. Kuo, C. S. Chang, S. C. Shei

研究成果: Article同行評審

54 引文 斯高帕斯(Scopus)


The etching behavior of sapphire has been investigated in an inductively couple plasma using Cl2, BCl3 and CH2Cl 2 as the reagent in this study. Inductively couple plasma etching rate of sapphire was investigated as function of a mixing gases ratio. The highest sapphire-etching rate was archived (1000 Å/min) with mixing BCl3/Cl2 gases for a coil power of 600 W, r.f. power of 150 W and process pressure of 5m Torr. The scanning electron microscopy was used to investigate the surface morphology and sidewall of sapphire. Several etching conditions yield highly anisotropic profiles with roughness sidewalls. These results have direct application to the fabrication of patterned sapphire substrate, which reduce the threading dislocation and increase the output light power and lifetime.

頁(從 - 到)1171-1174
期刊Optical Materials
出版狀態Published - 2005 三月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電腦科學(全部)
  • 原子與分子物理與光學
  • 光譜
  • 物理與理論化學
  • 有機化學
  • 無機化學
  • 電氣與電子工程


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