Identification of shape transitions in coherent Ge/Si islands using transmission electron microscopy

L. I.U. Chuan-Pu, William L. Henstrom, David G. Cahill, J. Murray Gibson

研究成果: Conference article同行評審

摘要

As a consequence of strain relaxation, Ge coherent islands on Si(001) substrates evolve to different shapes as islands grow. By measuring the size and the strain simultaneously in a large population of individual islands using two simple and robust plan-view transmission electron microscopy-based techniques, we can identify island shapes easily because island shape is a function of strain. We briefly introduce the mechanisms of these two techniques. We then show that there is a metastable shape of Ge islands involved in the shape transition between pyramids and domes. The strain relaxation changes discontinuously as islands grow from pyramids to the metastable form and then finally to domes indicating that the shape transition between pyramids and domes is first order. We also show that the shape of this metastable island is a truncated dome and the faceted planes are {103}.

原文English
頁(從 - 到)137-142
頁數6
期刊Materials Research Society Symposium - Proceedings
583
出版狀態Published - 2000
事件Self-Organized Processes in Semiconductor Alloys - Boston, MA, USA
持續時間: 1999 11月 291999 12月 2

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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