III-Nitride Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV detection

P. C. Chang, K. H. Lee, Shoou-Jinn Chang, Y. K. Su, T. C. Lin, S. L. Wu

研究成果: Article

摘要

III-nitride Schottky rectifiers (SRs) with (i.e., SR-A) and without (i.e., SR-B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR-A. Under reverse bias, it was found that SR-A showed a more than five orders magnitude smaller dark current than that in SR-B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR-A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.

原文English
文章編號5427256
頁(從 - 到)799-804
頁數6
期刊IEEE Sensors Journal
10
發行號4
DOIs
出版狀態Published - 2010 三月 19

指紋

rectifiers
Defect density
Dark currents
Electric breakdown
Nitrides
Leakage currents
nitrides
dark current
electrical faults
low noise
leakage
defects

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

引用此文

Chang, P. C. ; Lee, K. H. ; Chang, Shoou-Jinn ; Su, Y. K. ; Lin, T. C. ; Wu, S. L. / III-Nitride Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV detection. 於: IEEE Sensors Journal. 2010 ; 卷 10, 編號 4. 頁 799-804.
@article{315986350e084da585514ec33bb222f3,
title = "III-Nitride Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV detection",
abstract = "III-nitride Schottky rectifiers (SRs) with (i.e., SR-A) and without (i.e., SR-B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR-A. Under reverse bias, it was found that SR-A showed a more than five orders magnitude smaller dark current than that in SR-B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR-A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.",
author = "Chang, {P. C.} and Lee, {K. H.} and Shoou-Jinn Chang and Su, {Y. K.} and Lin, {T. C.} and Wu, {S. L.}",
year = "2010",
month = "3",
day = "19",
doi = "10.1109/JSEN.2009.2034626",
language = "English",
volume = "10",
pages = "799--804",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

III-Nitride Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV detection. / Chang, P. C.; Lee, K. H.; Chang, Shoou-Jinn; Su, Y. K.; Lin, T. C.; Wu, S. L.

於: IEEE Sensors Journal, 卷 10, 編號 4, 5427256, 19.03.2010, p. 799-804.

研究成果: Article

TY - JOUR

T1 - III-Nitride Schottky rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV detection

AU - Chang, P. C.

AU - Lee, K. H.

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Lin, T. C.

AU - Wu, S. L.

PY - 2010/3/19

Y1 - 2010/3/19

N2 - III-nitride Schottky rectifiers (SRs) with (i.e., SR-A) and without (i.e., SR-B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR-A. Under reverse bias, it was found that SR-A showed a more than five orders magnitude smaller dark current than that in SR-B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR-A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.

AB - III-nitride Schottky rectifiers (SRs) with (i.e., SR-A) and without (i.e., SR-B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR-A. Under reverse bias, it was found that SR-A showed a more than five orders magnitude smaller dark current than that in SR-B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR-A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.

UR - http://www.scopus.com/inward/record.url?scp=77949346584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949346584&partnerID=8YFLogxK

U2 - 10.1109/JSEN.2009.2034626

DO - 10.1109/JSEN.2009.2034626

M3 - Article

AN - SCOPUS:77949346584

VL - 10

SP - 799

EP - 804

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

SN - 1530-437X

IS - 4

M1 - 5427256

ER -