Impact of aluminum ion implantation on the low frequency noise characteristics of Hf-based high-k/metal gate pMOSFETs

Tsung Hsien Kao; San Lein Wu; Chung Yi Wu; Yean Kuen Fang; Bo Chin Wang; Po Chin Huang; Chien Ming Lai; Chia Wei Hsu; Yi Wen Chen; Osbert Cheng; Shoou Jinn Chang

doi:10.1109/LED.2014.2336866

Impact of aluminum ion implantation on the low frequency noise characteristics of Hf-based high-k/metal gate pMOSFETs

Tsung Hsien Kao, San Lein Wu, Chung Yi Wu, Yean Kuen Fang, Bo Chin Wang, Po Chin Huang, Chien Ming Lai, Chia Wei Hsu, Yi Wen Chen, Osbert Cheng, Shoou Jinn Chang

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The impact of aluminum ion implantation (Al I/I) on the 1/\(f\) noise and random telegraph noise (RTN) characteristics of high-(k)/metal gate (HK/MG) pMOSFETs is investigated. The Al I/I technology was implemented to tune the effective work function (EWF) of pMOSFETs without increasing the equivalent oxide thickness and complicating the process. The RTN and 1(f) noise results showed that irrespective of the implanted dose, the HK/MG devices with Al I/I still exhibit lower slow oxide trap densities for the control device, because the Al filled the defect and formed a thin Al₂O₃ layer. In addition, for the HK/MG devices with different implanted doses, no significant differences in the trap properties are noted. However, the modulated EWF can be attributed to the Al I/I-induced dipoles at the HfO₂/SiO₂ interface.

原文	English
文章編號	6866112
頁（從 - 到）	954-956
頁數	3
期刊	IEEE Electron Device Letters
卷	35
發行號	9
DOIs	https://doi.org/10.1109/LED.2014.2336866
出版狀態	Published - 2014 9月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2014.2336866

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title = "Impact of aluminum ion implantation on the low frequency noise characteristics of Hf-based high-k/metal gate pMOSFETs",

abstract = "The impact of aluminum ion implantation (Al I/I) on the 1/\(f\) noise and random telegraph noise (RTN) characteristics of high-(k)/metal gate (HK/MG) pMOSFETs is investigated. The Al I/I technology was implemented to tune the effective work function (EWF) of pMOSFETs without increasing the equivalent oxide thickness and complicating the process. The RTN and 1(f) noise results showed that irrespective of the implanted dose, the HK/MG devices with Al I/I still exhibit lower slow oxide trap densities for the control device, because the Al filled the defect and formed a thin Al2O3 layer. In addition, for the HK/MG devices with different implanted doses, no significant differences in the trap properties are noted. However, the modulated EWF can be attributed to the Al I/I-induced dipoles at the HfO2/SiO2 interface.",

author = "Kao, {Tsung Hsien} and Wu, {San Lein} and Wu, {Chung Yi} and Fang, {Yean Kuen} and Wang, {Bo Chin} and Huang, {Po Chin} and Lai, {Chien Ming} and Hsu, {Chia Wei} and Chen, {Yi Wen} and Osbert Cheng and Chang, {Shoou Jinn}",

year = "2014",

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doi = "10.1109/LED.2014.2336866",

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T1 - Impact of aluminum ion implantation on the low frequency noise characteristics of Hf-based high-k/metal gate pMOSFETs

AU - Kao, Tsung Hsien

AU - Wu, San Lein

AU - Wu, Chung Yi

AU - Fang, Yean Kuen

AU - Wang, Bo Chin

AU - Huang, Po Chin

AU - Lai, Chien Ming

AU - Hsu, Chia Wei

AU - Chen, Yi Wen

AU - Cheng, Osbert

AU - Chang, Shoou Jinn

PY - 2014/9

Y1 - 2014/9

N2 - The impact of aluminum ion implantation (Al I/I) on the 1/\(f\) noise and random telegraph noise (RTN) characteristics of high-(k)/metal gate (HK/MG) pMOSFETs is investigated. The Al I/I technology was implemented to tune the effective work function (EWF) of pMOSFETs without increasing the equivalent oxide thickness and complicating the process. The RTN and 1(f) noise results showed that irrespective of the implanted dose, the HK/MG devices with Al I/I still exhibit lower slow oxide trap densities for the control device, because the Al filled the defect and formed a thin Al2O3 layer. In addition, for the HK/MG devices with different implanted doses, no significant differences in the trap properties are noted. However, the modulated EWF can be attributed to the Al I/I-induced dipoles at the HfO2/SiO2 interface.

AB - The impact of aluminum ion implantation (Al I/I) on the 1/\(f\) noise and random telegraph noise (RTN) characteristics of high-(k)/metal gate (HK/MG) pMOSFETs is investigated. The Al I/I technology was implemented to tune the effective work function (EWF) of pMOSFETs without increasing the equivalent oxide thickness and complicating the process. The RTN and 1(f) noise results showed that irrespective of the implanted dose, the HK/MG devices with Al I/I still exhibit lower slow oxide trap densities for the control device, because the Al filled the defect and formed a thin Al2O3 layer. In addition, for the HK/MG devices with different implanted doses, no significant differences in the trap properties are noted. However, the modulated EWF can be attributed to the Al I/I-induced dipoles at the HfO2/SiO2 interface.

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Impact of aluminum ion implantation on the low frequency noise characteristics of Hf-based high-k/metal gate pMOSFETs

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