Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

Yi Jung Liu, Chih Hung Yen, Chia Hao Hsu, Kuo Hui Yu, Li Yang Chen, Tsung Han Tsai, Wen Chau Liu

研究成果: Letter

8 引文 斯高帕斯(Scopus)

摘要

An interesting GaN-based light emitting diode (LED) using a 50 nm indium oxide (In2O3)/250 nm indium-tin oxide (ITO) mixed structure to replace the commonly used ITO (250 nm) current spreading layer is fabricated and studied. Use of the In2O3 layer could reduce the contact resistance of p-GaN in LEDs. In addition, this highly-resistive In2O3 layer, below the ITO layer could improve the current spreading performance. Experimentally, at room temperature, using this mixed structure, the luminous and EL intensities are enhanced by 17.7 and 17.1%, respectively.

原文English
頁(從 - 到)575-577
頁數3
期刊Optical Review
16
發行號6
DOIs
出版狀態Published - 2009 十二月 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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