Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors

Shin Ping Huang, Po Hsun Chen, Hong Chih Chen, Yu Zhe Zheng, Ann Kuo Chu, Yu Ching Tsao, Yu Shan Shih, Yu Xuan Wang, Chia Chuan Wu, Wei-Chi Lai, Ting Chang Chang

研究成果: Article

摘要

This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.

原文English
期刊IEEE Electron Device Letters
DOIs
出版狀態Accepted/In press - 2019 一月 1

指紋

Thin film transistors
Dehydrogenation
Polysilicon
Lighting
Annealing
Dangling bonds
Silicon
Fabrication
Atoms
Temperature
Negative bias temperature instability

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Huang, S. P., Chen, P. H., Chen, H. C., Zheng, Y. Z., Chu, A. K., Tsao, Y. C., ... Chang, T. C. (認可的出版社/出版中). Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors. IEEE Electron Device Letters. https://doi.org/10.1109/LED.2019.2935183
Huang, Shin Ping ; Chen, Po Hsun ; Chen, Hong Chih ; Zheng, Yu Zhe ; Chu, Ann Kuo ; Tsao, Yu Ching ; Shih, Yu Shan ; Wang, Yu Xuan ; Wu, Chia Chuan ; Lai, Wei-Chi ; Chang, Ting Chang. / Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors. 於: IEEE Electron Device Letters. 2019.
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abstract = "This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.",
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Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors. / Huang, Shin Ping; Chen, Po Hsun; Chen, Hong Chih; Zheng, Yu Zhe; Chu, Ann Kuo; Tsao, Yu Ching; Shih, Yu Shan; Wang, Yu Xuan; Wu, Chia Chuan; Lai, Wei-Chi; Chang, Ting Chang.

於: IEEE Electron Device Letters, 01.01.2019.

研究成果: Article

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T1 - Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors

AU - Huang, Shin Ping

AU - Chen, Po Hsun

AU - Chen, Hong Chih

AU - Zheng, Yu Zhe

AU - Chu, Ann Kuo

AU - Tsao, Yu Ching

AU - Shih, Yu Shan

AU - Wang, Yu Xuan

AU - Wu, Chia Chuan

AU - Lai, Wei-Chi

AU - Chang, Ting Chang

PY - 2019/1/1

Y1 - 2019/1/1

N2 - This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.

AB - This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.

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