摘要
This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.
| 原文 | English |
|---|---|
| 期刊 | IEEE Electron Device Letters |
| DOIs | |
| 出版狀態 | Accepted/In press - 2019 一月 1 |
指紋
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
引用此文
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Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors. / Huang, Shin Ping; Chen, Po Hsun; Chen, Hong Chih; Zheng, Yu Zhe; Chu, Ann Kuo; Tsao, Yu Ching; Shih, Yu Shan; Wang, Yu Xuan; Wu, Chia Chuan; Lai, Wei-Chi; Chang, Ting Chang.
於: IEEE Electron Device Letters, 01.01.2019.研究成果: Article
TY - JOUR
T1 - Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors
AU - Huang, Shin Ping
AU - Chen, Po Hsun
AU - Chen, Hong Chih
AU - Zheng, Yu Zhe
AU - Chu, Ann Kuo
AU - Tsao, Yu Ching
AU - Shih, Yu Shan
AU - Wang, Yu Xuan
AU - Wu, Chia Chuan
AU - Lai, Wei-Chi
AU - Chang, Ting Chang
PY - 2019/1/1
Y1 - 2019/1/1
N2 - This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.
AB - This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.
UR - http://www.scopus.com/inward/record.url?scp=85070955089&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85070955089&partnerID=8YFLogxK
U2 - 10.1109/LED.2019.2935183
DO - 10.1109/LED.2019.2935183
M3 - Article
AN - SCOPUS:85070955089
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
ER -