Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

Shankar Sinha; Meng Hsueh Chiang; Mario M. Pelella

Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

Shankar Sinha
, Meng Hsueh Chiang
, Mario M. Pelella

研究成果: Paper › 同行評審

摘要

Impact of gate tunneling on the nature of the chargedump current in 100nm partially depleted silicon on insulator (PDSOI) technology was discussed. Recombination lifetime and gate tunneling affected the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.

原文	English
頁面	41-42
頁數	2
出版狀態	Published - 2002 1月 1
事件	IEEE International SOI Conference - Williamsburg, VA, United States 持續時間: 2002 10月 7 → 2002 10月 10

Other

Other	IEEE International SOI Conference
國家/地區	United States
城市	Williamsburg, VA
期間	02-10-07 → 02-10-10

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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title = "Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology",

abstract = "Impact of gate tunneling on the nature of the chargedump current in 100nm partially depleted silicon on insulator (PDSOI) technology was discussed. Recombination lifetime and gate tunneling affected the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.",

author = "Shankar Sinha and Chiang, \{Meng Hsueh\} and Pelella, \{Mario M.\}",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "41--42",

note = "IEEE International SOI Conference ; Conference date: 07-10-2002 Through 10-10-2002",

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TY - CONF

T1 - Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

AU - Sinha, Shankar

AU - Chiang, Meng Hsueh

AU - Pelella, Mario M.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Impact of gate tunneling on the nature of the chargedump current in 100nm partially depleted silicon on insulator (PDSOI) technology was discussed. Recombination lifetime and gate tunneling affected the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.

AB - Impact of gate tunneling on the nature of the chargedump current in 100nm partially depleted silicon on insulator (PDSOI) technology was discussed. Recombination lifetime and gate tunneling affected the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.

UR - https://www.scopus.com/pages/publications/0036458456

UR - https://www.scopus.com/pages/publications/0036458456#tab=citedBy

M3 - Paper

AN - SCOPUS:0036458456

SP - 41

EP - 42

T2 - IEEE International SOI Conference

Y2 - 7 October 2002 through 10 October 2002

ER -

Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

摘要

Other

All Science Journal Classification (ASJC) codes

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