Impact of gate work-function on memory characteristics in Al 2O 3/HfO x/Al 2O 3/graphene charge-trap memory devices

Sejoon Lee, Emil B. Song, Sungmin Kim, David H. Seo, Sunae Seo, Tae Won Kang, Kang L. Wang

研究成果: Article同行評審

43 引文 斯高帕斯(Scopus)

摘要

Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al 2O 3/HfO x/Al 2O 3 charge-storage layer exhibit memory functionality. The impact of the gate material's work-function (Φ) on the memory characteristics is investigated using different types of metals [Ti (Φ Ti 4.3 eV) and Ni (Φ Ni 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (ΔV M), which is ∼4.5 V for the Ti-gate device and ∼9.1 V for the Ni-gate device. The increase in ΔV M is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack.

原文English
文章編號023109
期刊Applied Physics Letters
100
發行號2
DOIs
出版狀態Published - 2012 一月 9

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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